"Физика и техника полупроводников"
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Dielectric properties of oligonucleotides on the surface of Si nanosandwich structures
Переводная версия: 10.1134/S106378261805007X
Fomin Maxim A.1, Chernev Andrey L.2, Bagraev Nicolay T.3, Klyachkin Leonid E.3, Emelyanov Anton K.2, Dubina Michael V.2
1Peter the Great St. Petersburg Polytechnic University (SPbPU), St. Petersburg, Russia
2St. Petersburg Academic University Nanotechnology Research and Education Centre RAS, St. Petersburg, Russia
3A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
Email: chernev.andrew@gmail.com
Выставление онлайн: 19 апреля 2018 г.

Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by delta-barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current-voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G-C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics. Acknowledgement The reported study was partially supported by RFBR, research project No 16-32-00577 mol_a and FASIE, research project No 10356/2015.

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