"Физика и техника полупроводников"
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The features of GaAs nanowire SEM images
Переводная версия: 10.1134/S1063782618050317
Soshnikov I.P.1,2,3, Kotlyar K.P.1,4, Bert N.A.2, Kirilenko D.A.2,5, Bouravleuv A.D.1,2,3, Cirlin G.E.1,2,3,4
1St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, Russia
2Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
3Institute for Analytical Instrumentation RAS, St. Petersburg, Russia
4St. Petersburg State University, St. Petersburg, Russia
5ITMO University, Saint Petersburg, Russia
Email: ipsosh@beam.ioffe.ru
Выставление онлайн: 19 апреля 2018 г.

The detailed study of GaAs nanowires synthesized by molecular beam epitaxy performed by scanning electron microscopy allowed to reveal the presence of specific contrast in the images obtained. To understand the causes of the phenomenon the transmission electron microscopy of nanowire crystal structure was carried out. The results showed that it could be caused by the segments having polytypic crystal phase. It was also confirmed by the modelling of the electron beam scattering on such nanowire arrays. Acknowledgments The work has been carried out with the use of equipment of the Federal Joint Research Centre "Material science and characterization in advanced technology" (Ioffe Institute, St. Petersburg, Russia). The work is supported Russian foundation for Basic Research (15-07-06964, 13-02-12031 ofi-m) and Russian Science Foundation (14-12-00393) and Program of Russian Academy of Science "Nanostructures".

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Дата начала обработки статистических данных - 27 января 2016 г.