"Физика и техника полупроводников"
Вышедшие номера
The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination
Правительство Российской Федерации, Спин, 01201463330
РФФИ, мол_а, 16-32-00725
РФФИ, а, 14-02-00151
Arapov Yu.G. 1, Gudina S.V. 1, Klepikova A.S. 1, Neverov V.N. 1, Harus G.I. 1, Shelushinina N.G. 1, Yakunin M.V. 1,2
1Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Yekaterinburg, Russia
2Ural Federal University, Yekaterinburg, Russia
Email: arapov@imp.uran.ru, svpopova@imp.uran.ru, klepikova@imp.uran.ru, neverov@imp.uran.ru, harus@imp.uran.ru, shel@imp.uran.ru, yakunin@imp.uran.ru
Поступила в редакцию: 26 апреля 2016 г.
Выставление онлайн: 20 января 2017 г.

The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields B=0-16 T and temperatures T=0.05-4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated. DOI: 10.21883/FTP.2017.02.44119.8302
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