"Физика и техника полупроводников"
Вышедшие номера
Comparative Investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs Heterojunction Bipolar Transistors
Wu Yi-Chen1, Tsai Jung-Hui2, Chiang Te-Kuang1, Wang Fu-Min1
1Department of Electrical Engineering, National University of Kaohsiung, 700, Kaohsiung University Rd., 811 Kaohsiung, Taiwan
2Department of Electronic Engineering, National Kaohsiung Normal University, 802 Kaohsiung, Taiwan
Поступила в редакцию: 4 февраля 2015 г.
Выставление онлайн: 19 сентября 2015 г.

In this article the characteristics of In0.49Ga0.51P/GaAs/GaAs0.975Bi0.025 and In0.49Ga0.51P/GaAs heterojunction bipolar transistor (HBTs) are demonstrated and compared by two-dimensional simulated analysis. As compared to the traditional InGaP/GaAs HBT, the studied InGaP/GaAs/GaAsBi HBT exhibits a higher collector current, a lower base-emitter (B-E) turn-on voltage, and a relatively lower collector-emitter offset voltage of only 7 mV. Because the more electrons stored in the base is further increased in the InGaP/GaAs/GaAsBi HBT, it introduces the collector current to increase and the B-E turn-on voltage to decrease for low input power applications. However, the current gain is slightly smaller than the traditional InGaP/GaAs HBT attributed to the increase of base current for the minority carriers stored in the GaAsBi base.
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