"Физика и техника полупроводников"
Вышедшие номера
Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers
Tsai Jung-Hui1, Ye Sheng-Shiun1, Guo Der-Feng2, Lour Wen-Shiung3
1Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 824, Taiwan
2Department of Electronic Engineering, Air Force Academy, Kaohsiung, Sisou 1, Jieshou W. Rd., Gangshan Dist., Kaohsiung City 820, Taiwan
3Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung 202, Taiwan
Поступила в редакцию: 1 сентября 2011 г.
Выставление онлайн: 20 марта 2012 г.

Influence corresponding to the position of delta-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the device with lower delta-doped supplied layer shows a higher gate potential barrier height, a higher saturation output current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the device with upper delta-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency characteristics in the device with lower delta-doped supplied layer. Furthermore, a knee effect in current-voltage curves is observed at low drain-to-source voltage in the two devices, which is investigated in this article.
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