"Физика и техника полупроводников"
Издателям
Вышедшие номера
InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures
Tsai Jung-Hui1, Lour Wen-Shiung2, Guo Der-Feng3, Liu Wen-Chau4, Wu Yi-Zhen1, Dai Ying-Feng1
1Department of Electronic Engineering, National Kaohsiung Normal University, 116, Ho-ping 1 st Road, Kaohsiung, Taiwan
2Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, Taiwan
3Department of Electronic Engineering, Air Force Academy, Kaohsiung, Taiwan
4Institude of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan
Поступила в редакцию: 27 января 2010 г.
Выставление онлайн: 20 июля 2010 г.

High-performance InP/GaAsSb double heterojunction bipolar transistor (DHBT) employing GaAsSb/InGaAs superlattice-base structure is demonstrated and compared with GaAsSb bulk-base structure by two-dimensional simulation analysis. The proposed device exhibits a higher current gain of 257 than the conventional InP/GaAsSb type-II DHBT with a lower current gain of 180, attributed to the tynneling behavior of minority carriers in the GaAsSb/InGaAs superlattice-base region under large forward base-emitter bias. In addition, a larger unity gain cutoff frequency of 19.1 GHz is botained for the superlattice-base device than that of 17.2 GHz for the bulk-base device.
  1. Y. Matsuoka, E. Sano. Sol. St. Electron., 38, 1703 (1995)
  2. D. Hadziabdic, T.K. Johansen, V. Krozer, A. Konczykowska, M. Riet, F. Jorge, J. Godin. Electron. Lett., 43, 153 (2007)
  3. T.P. Chen, S.Y. Cheng, C.W. Hung, K.Y. Chu, L.Y. Chen, T.H. Tsai, W.C. Liu. IEEE Electron. Dev. Lett., 29, 11 (2008)
  4. K. Ishii, H. Nakajima, H. Nosaka, M. Ida, K. Kurishima, S. Yamahata, T. Enoki, T. Shibata. Electron. Lett., 39, 911 (2003)
  5. J.H. Tsai, Y.C. Kang. IEEE Trans. Electron. Dev., 53, 1265 (2006)
  6. H. Wang, G.I. Ng. IEEE Trans. Electron. Dev., 47, 1125 (2000)
  7. C.R. Bolognesi, M.M. Dvorak, P. Yeo, X.G. Xu, S.P. Watkins. IEEE Trans. Electron. Dev., 48, 2631 (2001)
  8. Y. Oda, K. Kurishima, N. Watanabe, M. Uchida, T. Kobayashi. Proc. Int. Conf. Indium Phosphide and Related Mater. (2006) p. 92
  9. SILVACO 2000 Atals User's Manual Editor I (SILVACO Int. Santa Clara, CA, USA)
  10. J.H. Tsai, W.C. Liu, D.F. Guo, Y.C. Kang, S.Y. Chiu, W.S. Lour. Semiconductors, 42, 346 (2008)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.