"Физика и техника полупроводников"
Вышедшие номера
Measurement and comparison of silicon p-i-n-photodiodes ac impedance at different voltages
Ozden S.1, Bayhan H.1, Donmez A.1, Bayhan M.1
1University of Muv gla, Faculty of Art and Sience, Department of Physics, Muv gla, Turkey
Поступила в редакцию: 15 мая 2007 г.
Выставление онлайн: 19 июня 2008 г.

The dark alternating current (ac) parameters of commercially available silicon p-i-n-photodiodes are measured and compared at room temperature both in forward and reverse bias using the impedance spectroscopy technique. The ac behaviour of the photodiodes are found to be almost the same. For bias voltages in the range from -0.8 to 0.0 V, the typical photodiode behaves like a pure capacitor. For higher voltages (V>=q 0.2 V) the impedance spectra are nearly semicircle and typically distorted on the high frequency side. At 0.2 V the distortion apparently arises from one of the two interfaces. However, at high bias voltages the nature of the distortion is attributed to the variation of photodiode capacitance and resistance with measurement frequency. PACS: 85.60.Dw, 73.40.Lq
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