Поступила в редакцию: 30 марта 2021 г.
Выставление онлайн: 9 июня 2021 г.
In this work, two effects appeared in PbTe p-n junctions under long-wave irradiation by CO2 laser were investigated. The first effect was created by the optical absorption of long-wave photons in PbTe and caused by its photovoltaic effect. The mechanism of photoeffect is connected with the formation of electron-hole pairs by two-photon processes of absorption and separation of pairs at the p-n junction. The second novel effect is related to the heating process and the formation of temperature difference at the p-n junction. The main feature of PbTe semiconductor is a strong temperature dependence of static dielectric constant ε. In this case, for PbTe p-n junction it was created a barrier pyroelectric effect. PbTe p-n junctions were fabricated employing indium donor diffusion into PbTe single crystals grown by the Chochrasky technique. Current-voltage and capacitance-voltage characteristics have been measured over a wide temperature range. The dark saturation current density was ~10-7 A/cm2 at T=100 K. Two methods were used. The short-pulsed CO2 laser light (with a pulse duration of 150 ns) across the PbTe p-n junction was used for the investigation of the photovoltaic effect. The continuous irradiation of CO2 was used for the investigation of the thermal effect and caused by its barrier pyroelectric effect (BPE). These two effects were investigated over the 40-150 K temperature range. Keywords: PbTe semiconductor, p.n junction, two-photon absorption, barrier pyroelectric effect.
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Дата начала обработки статистических данных - 27 января 2016 г.