"Физика и техника полупроводников"
Вышедшие номера
Fabrication of Cu2ZnSnSe4 Thin Films by Selenising Cu1.8Se, SnSe, and ZnSe Precursor Layers: Effects of the Sequence of Layers
Government of the Russia , programme 211, project No 02.A03.21.0006
FASO of Russia , АААА-А18-118020190112-8
Maskaeva L.N.1,2, Markov V.F.1,2, Gracheva E.A.1, Voronin V.I.3, Kozhevnikova N.S.4, Martin R.W.5, Yakushev M.V.1,3,4,5, Kuznetsov M.V.4
1Ural Federal University, 19 Mira St., Ekaterinburg, Russia
2Ural Institute of State Fire Service, 22 Mira St., Ekaterinburg, Russia
3Miheev Institute of Metal Physics of the Ural Branch Russian Academy of Sciences, 18 S. Kovalevskoy St.,, Ekaterinburg, Russia
4Institute of Solid State Chemistry of the Ural Branch Russian Academy of Sciences, 91 Pervomaiskaya St., Ekaterinburg, Russia
5Department of Physics, SUPA, University of Strathclyde, 107 Rottenrow, G4 0NG Glasgow, UK
Email: larisamaskaeva@yandex.ru, v.f.markov@urfu.ru, ka_fed-ra@mail.ru, voronin@imp.uran.ru, kozhevnikova@ihim.uran.ru, r.w.martin@strath.ac.uk, michael.yakushev@strath.ac.uk, kuznetsov@ihim.uran.ru
Поступила в редакцию: 5 апреля 2021 г.
Выставление онлайн: 9 июня 2021 г.

Thin films of Cu2ZnSnSe4 (CZTSe) with a deficiency of Cu and Zn excess are fabricated by a selenisation of precursors composed of several layers of the selenides Cu1.8Se, SnSe, and ZnSe (with different sequences of the layers), deposited on glass substrates from water-based solutions. The elemental composition of the films is examined by electron dispersive analysis and X-ray photoelectron spectroscopy whereas the structure is analysed by X-ray diffraction. Films fabricated from precursors with the selenide layer sequence Cu1.8Se|SnSe|ZnSe|SnSe demonstrate the CZTSe kesterite structure, whereas those produced from precursors with other sequences of the selenides are mixtures of binary phases. Keywords: CZTSe, chemical bath deposition, structure, thin films, absorber.

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