"Физика и техника полупроводников"
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Вышедшие номера
Obtaining of SmS based semiconducting material and investigation of its electrical properties
Kaminskii V.V.1, Hirai Shinji2, Kuzuya Toshihiro2, Solov'ev S.M.1, Stepanov N.N.1, Sharenkova N.V.1
1Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Muroran Institute of Technology, Muroran, Hokkaido, Japan
Поступила в редакцию: 19 февраля 2013 г.
Выставление онлайн: 19 сентября 2013 г.

Semiconductor samarium monosulfide polycrystals obtained by reaction between samarium trihydride (SmH3) and its sesquisulfide were studied. The temperature, baric and frequency dependences of the resistivity and structural features of the samples were investigated. It is shown that the value of X-ray coherent scattering region is extremely small for SmS samples, 320 Angstrem; critical pressure of semiconductor--metal phase transition is higher than in the samples, obtained by other methods, 0.88 GPa; the temperature dependence of the resistivity has metallic behaviour. Hopping mechanism of electron transport was found. All these features are explained by more defective structure of the polycrystalline SmS samples.
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