Физика и техника полупроводников

Авторам

Правила оформления публикаций

Вышедшие номера

2024
- 1 2 3 4 5 6 7 8 9
2023
- 1 2 3 4 5 6 7 8 9
2022
- 1 2 3 4 5 6 7 8 9 10 11 12
2021
- 1 2 3 4 5 6 7 8 9 10 11 12
2020
- 1 2 3 4 5 6 7 8 9 10 11 12
2019
- 1 2 3 4 5 6 7 8 9 10 11 12
2018
- 1 2 3 4 5 6 7 8 9 10 11 12 13
2017
- 1 2 3 4 5 6 7 8 9 10 11 12
2016
- 1 2 3 4 5 6 7 8 9 10 11 12
2015
- 1 2 3 4 5 6 7 8 9 10 11 12
2014
- 1 2 3 4 5 6 7 8 9 10 11 12
2013
- 1 2 3 4 5 6 7 8 9 10 11 12
2012
- 1 2 3 4 5 6 7 8 9 10 11 12
2011
- 1 2 3 4 5 6 7 8 9 10 11 12
2010
- 1 2 3 4 5 6 7 8 9 10 11 12
2009
- 1 2 3 4 5 6 7 8 9 10 11 12
2008
- 1 2 3 4 5 6 7 8 9 10 11 12
2007
- 1 2 3 4 5 6 7 8 9 10 11 12
2006
- 1 2 3 4 5 6 7 8 9 10 11 12
2005
- 1 2 3 4 5 6 7 8 9 10 11 12
2004
- 1 2 3 4 5 6 7 8 9 10 11 12
2003
- 1 2 3 4 5 6 7 8 9 10 11 12
2002
- 1 2 3 4 5 6 7 8 9 10 11 12
2001
- 1 2 3 4 5 6 7 8 9 10 11 12
2000
- 1 2 3 4 5 6 7 8 9 10 11 12
1999
- 1 2 3 4 5 6 7 8 9 10 11 12
1998
- 1 2 3 4 5 6 7 8 9 10 11 12
1997
- 1 2 3 4 5 6 7 8 9 10 11 12
1996
- 1 2 3 4 5 6 7 8 9 10 11 12
1995
- 1 2 3 4 5 6 7 8 9 10 11 12
1994
- 1 2 3 4 5 6 7 8 9 10 11 12
1993
- 1 2 3 4 5 6 7 8 9 10 11 12
1992
- 1 2 3 4 5 6 7 8 9 10 11 12
1991
- 1 2 3 4 5 6 7 8 9 10 11 12
1990
- 1 2 3 4 5 6 7 8 9 10 11 12
1989
- 1 2 3 4 5 6 7 8 9 10 11 12
1988
- 1 2 3 4 5 6 7 8 9 10 11 12

Obtaining of SmS based semiconducting material and investigation of its electrical properties

Kaminskii V.V.¹, Hirai Shinji², Kuzuya Toshihiro², Solov'ev S.M.¹, Stepanov N.N.¹, Sharenkova N.V.¹

¹Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia
²Muroran Institute of Technology, Muroran, Hokkaido, Japan

Muroran Institute of Technology, Muroran, Hokkaido, Japan

Поступила в редакцию: 19 февраля 2013 г.

Выставление онлайн: 19 сентября 2013 г.

PDF версия

Абстракт
Литература
Статистика просмотров

Semiconductor samarium monosulfide polycrystals obtained by reaction between samarium trihydride (SmH₃) and its sesquisulfide were studied. The temperature, baric and frequency dependences of the resistivity and structural features of the samples were investigated. It is shown that the value of X-ray coherent scattering region is extremely small for SmS samples, 320 Angstrem; critical pressure of semiconductor-metal phase transition is higher than in the samples, obtained by other methods, 0.88 GPa; the temperature dependence of the resistivity has metallic behaviour. Hopping mechanism of electron transport was found. All these features are explained by more defective structure of the polycrystalline SmS samples.

A.V. Golubkov, E.I. Goncharova, V.P. Zhuze, G.M. Loginov, V.M. Sergeeva, I.A. Smirnov. Physical Properties of Rare-Earth Chalcogenides (L., Nauka, 1973) [in Russian]
V.V. Kaminskii, Yu.M. Sosov. A.c. N 1554433, priority from 05.04.1988
L.N. Vasil`ev, V.V. Kaminskii, M.V. Romanova, N.V. Sharenkova, A.V. Golubkov. Phys. Solidi State, 48 (10), 1884 (2006)
S.I. Grebinskii, V.V. Kaminskii, A.V. Ryabov, N.N. Stepanov. Sov. Phys. Solidi State, 24 (6), 1069 (1982)
L.N. Vasil'ev, V.V. Kaminskii, Yu.M. Kurapov, M.V. Romanova, N.V. Sharenkova. Phys. Solidi State, 38 (3), 430 (1996)
N.F. Mott, E.A. Davis. Electronic Processes in Non-crystalline Materials (Clarendon Press, Oxford, 1971)
N.V. Sharenkova, V.V. Kaminskii, M.V. Romanova, L.N. Vasil`ev, G.A. Kamenskaya. Phys. Solidi State, 50 (7), 1207 (2008)
V.V. Kaminskii, A.V. Golubkov, L.M. Vasil`ev. Phys. Solidi State, 44 (8), 1574 (2002)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Учредители

Издатель