Вышедшие номера
RF Performance Investigation of NiO Pocket on Ga2O3-Based Hetero-MOSFET
Yadava N.1, Chauhan R.K.1
1Department of Electronics & Communication Engineering, MMMUT, Gorakhpur, U.P., India
Email: narendrayadava5@gmail.com
Поступила в редакцию: 27 января 2020 г.
Выставление онлайн: 11 февраля 2021 г.

In this paper, the performance of p-type NiO pocket on Ga2O3|Graphene and Ga2O3|Black phosphorous hetero-MOSFET has been investigated to find out its applicability in the wireless applications. To show the utility of the proposed devices, its analog/RF characteristics have been studied and compared to those of the experimentally demonstrated conventional Ga2O3 MOSFET. The large signal RF performances analysis has also been carried out by considering CW Class-A power measurements at 0.8 GHz using passive source and load tuning. The important figure of merits (FOMs) used in the analysis are intrinsic capacitances CGS and CGD, cutoff frequency fT, output power gain GP, and power-added efficiency (PAE). The key idea behind this work is to propose a device which is efficient and shows low leakage current. All the analysis of proposed devices has been carried out using ATLAS TCAD simulator. Keywords: wide band gap semiconductors, RFICs, high power FOMs, leakages, RF FOMs.

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Дата начала обработки статистических данных - 27 января 2016 г.