Вышедшие номера
Effect of Annealing on the Surface Morphology and Current--Voltage Characterization of a CZO Structure Prepared by RF Magnetron Sputtering
Полная версия: 10.1134/S1063782621010115
Kinaci B. 1, Celik E.1, Cokduygulular E.1, Cetinkaya C1, Yalcin Y.1, Efkere H.I1, Ozen Y.1, Sonmez N.A.1, Ozcelik S.1
1Department of Physics, Faculty of Science, Istanbul University, 34134, Istanbul, Turkey
Email: baris.kinaci@istanbul.edu.tr
Поступила в редакцию: 11 августа 2020 г.
Выставление онлайн: 12 октября 2020 г.

In this study, we investigated the Cu-doped ZnO (CZO) structure. This structure was deposited on the Si and glass substrates using the RF magnetron sputtering technique. Morphological and structural features of CZO thin films (CZOs), as-deposited and annealed at temperatures of 200, 400, and 600oC, were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), as well as atomic force microscopy (AFM). CZO film annealed at temperature of 600oC has a sharp peak, good homogeneity, and low surface roughness compared to others. Electrical properties of the MOS structures, which are of CZO interlayer, deposited on n-Si substrate, were characterized by I(V) measurement at room temperature. The fundamental electrical parameters were calculated by analyzing the forward bias I(V) curves at room temperature. The series resistance Rs values of the device were also determined using thermionic emission theory and Cheung and Cheung methods. According to experimental results, Au|CZO|n-Si MOS structure annealed at 600oC has low Rs values compared to other investigated MOS structures in the present study. As a result, it was found that CZO structure annealed at 600oC is suitable for innovative and state-of-the-art electronic and optoelectronic device applications. Keywords: CZO, structural properties, surface morphology, RF magnetron sputtering, I(V) characteristic.

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