In this study, we investigated the Cu-doped ZnO (CZO) structure. This structure was deposited on the Si and glass substrates using the RF magnetron sputtering technique. Morphological and structural features of CZO thin films (CZOs), as-deposited and annealed at temperatures of 200, 400, and 600^oC, were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), as well as atomic force microscopy (AFM). CZO film annealed at temperature of 600^oC has a sharp peak, good homogeneity, and low surface roughness compared to others. Electrical properties of the MOS structures, which are of CZO interlayer, deposited on n-Si substrate, were characterized by I(V) measurement at room temperature. The fundamental electrical parameters were calculated by analyzing the forward bias I(V) curves at room temperature. The series resistance R_s values of the device were also determined using thermionic emission theory and Cheung and Cheung methods. According to experimental results, Au|CZO|n-Si MOS structure annealed at 600^oC has low R_s values compared to other investigated MOS structures in the present study. As a result, it was found that CZO structure annealed at 600^oC is suitable for innovative and state-of-the-art electronic and optoelectronic device applications. Keywords: CZO, structural properties, surface morphology, RF magnetron sputtering, I(V) characteristic.

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Дата начала обработки статистических данных - 27 января 2016 г.