"Физика и техника полупроводников"
Вышедшие номера
Analytical Drain Current Modeling and Simulation of Triple Material Gate-All-Around Heterojunction TFETs Considering Depletion Regions
Полная версия: 10.1134/S1063782620120398
Usha C.1, Vimala P.1
1Department of Electronics and Communication, Dayananda Sagar College of Engineering, Bangalore, Karnataka, India
Email: usha.chintu.dec14@gmail.com, ervimala@gmail.com
Поступила в редакцию: 11 мая 2020 г.
Выставление онлайн: 11 сентября 2020 г.

This paper deals with electrostatic behavior of triple-material gate-all-around hetero-junction tunneling field-effect transistors (TMGAA-HJTFET) device. The model is advantageous in apprehending a comparative study with the single-material gate-all-around hetero-junction tunneling field-effect transistors (SMGAA-HJTFET) in terms of surface potential, electric field, drain current, transconductance, and threshold voltage. The surface-potential distribution in partition regions along the channel is solved by using two-dimensional Poisson's equation. By using the drift and diffusion current, drain current is derived, and IOn/IOff ratio of 1011 is gained from analytical modeling and TCAD simulation. Transconductance and threshold voltage are derived from the tunneling current. The proposed model results are validated by the ATLAS TCAD simulation tool. Keywords: drain current, surface potential, electric field, TFETs, TCAD simulation.

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