"Физика и техника полупроводников"
Вышедшие номера
MOS solar cells with oxides deposited by sol-gel spin-coating techniques
Huang Chia-Hong1, Chang Chung-Cheng2, Tsai Jung-Hui1
1Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung, Taiwan
2Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan
Поступила в редакцию: 23 августа 2012 г.
Выставление онлайн: 20 мая 2013 г.

The metal-oxide-semiconductor (MOS) solar cells with sol-gel derived silicon dioxides (SiO2) deposited by spin coating are proposed in this study. The sol-gel derived SiO2 layer is prepared at low temperature of 450oC. Such processes are simple and low-cost. These techniques are, therefore, useful for large-scale and large-amount manufacturing in MOS solar cells. It is observed that the short-circuit current density (Isc) of 2.48 mA, the open-circuit voltage (Vos) of 0.44 V, the fill factor (FF) of 0.46 and the conversion efficiency (eta%) of 2.01% were obtained by means of the current-voltage (I-V) measurements under AM 1.5 (100 mW/cm2) irradiance at 25oC in the MOS solar cell with sol-gel derived SiO2.
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