Вышедшие номера
Vacancy-phosphorus complexes in electron-irradiated floating-zone n-type silicon: new points in annealing studies
Полная версия: 10.1134/S1063782620010078
Emtsev V.V.1, Abrosimov N.V.2, Kozlovski V.V.3, Oganesyan G.A.1, Poloskin D.S.1
1Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Leibniz-Institute for Crystal Growth, Berlin, Germany
3Peter the Great Polytechnical University, St. Petersburg, Russia
Email: emtsev@mail.ioffe.ru
Поступила в редакцию: 3 июня 2019 г.
Выставление онлайн: 20 декабря 2019 г.

Annealing processes of vacancy-impurity atom pairs in moderately doped n-type silicon grown by the floating-zone technique and subjected to 0.9 MeV electron irradiation are investigated by means of Hall effect and conductivity measurements taking over a wide temperature range of 20 to 300 K. Changes in the total concentrations of shallow donors and compensating acceptors in samples prior to and after irradiation as well in the course of isochronal annealing in a temperature interval of 100 to 700oC are determined. It is demonstrated that the Fermi level at annealing stages between 100 and 260oC plays an important part in recovery of the electrical properties of irradiated samples. There is evidence that the first annealing stage between 100 and 160oC is associated with limited migration of vacancy-impurity atom pairs and their trapping by free phosphorus impurity atoms. As a consequence, complexes of vacancy-two impurity atoms appear. They are stable up to 600oC. The complete restoration of the electrical parameters of irradiated samples is observed at 700oC. Keywords: silicon, irradiation, vacancy-phosphorus complexes, annealing.

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