"Физика и техника полупроводников"
Вышедшие номера
Composition and band structure of the native oxide nanolayer on the ion beam treated surface of the GaAs wafer
Переводная версия: 10.1134/S1063782618050214
Mikoushkin V.M.1, Bryzgalov V.V.1, Nikonov S.Yu.1, Solonitsyna A.P.1, Marchenko D.E.2,3
1Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Technische Universitat Dresden, Dresden, Germany
3Helmholtz-Zentrum BESSY II, German-Russian Laboratory, Berlin, Germany
Email: V.Mikoushkin@mail.ioffe.ru
Выставление онлайн: 19 апреля 2018 г.

Detailed information on GaAs oxide properties is important for solving the problem of passivating and dielectric layers in the GaAs-based electronics. The elemental and chemical compositions of the native oxide layer grown on the atomically clean surface of an n-GaAs(100) wafer etched by Ar+ ions have been studied by synchrotron-based photoelectron spectroscopy. It has been revealed that the oxide layer is essentially enriched in the Ga2O3 phase which is known to be a quite good dielectric as compared to As2O3. The gallium to arsenic ratio reaches the value as high as [Ga]/[As] = 1.5 in the course of oxidation.The Ga-enrichment occurs supposedly due to diffusion away of As released in preferential oxidation of Ga atoms. A band diagram was constructed for the native oxide nanolayer on the n-GaAs wafer. It has been shown that this natural nanostructure has features of a p-n heterojunction. Acknowledgements This work was supported by the Russian Science Foundation (Project No 17-19-01200). The authors also thank Helmholtz Zentrum Berlin (HZB) for the allocation of synchrotron radiation beamtime at the Russian--German Laboratory of BESSY II Helmholtz Zentrum Berlin for the support in the synchrotron radiation experiments.

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.