"Физика и техника полупроводников"
Вышедшие номера
Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy
Переводная версия: 10.1134/S1063782618040206
Lebedev D.V.1, Kalyuzhnyy N.A.1, Mintairov S.A.1, Belyaev K.G.1, Rakhlin M.V.1, Toropov A.A.1, Brunkov P.1,2, Vlasov A.S.1, Merz J.3, Rouvimov S.3, Oktyabrsky S.4, Yakimov M.4, Mukhin, I.V.5, Shelaev, A.V.6, Bykov, V.A.6, Romanova, A.Yu.2, Buryak, P.A.2, Mintairov, A.M.1,3
1Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Saint-Petersburg Polytechnical University, St. Petersburg, Russia
3University of Notre Dame, Notre Dame, Indiana, USA
4Institute for Materials, State University of New York at Albany, USA. NY. Albany.251 Fuller Rd.
5St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, Russia
6NT-MDT Spectrum Instruments. St. Petersburg, Russia
Email: Lebedev.dmitri@mail.ioffe.ru
Выставление онлайн: 20 марта 2018 г.

We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100-200 nm, together with a bimodal height distribution having maxima at ~5 and ~15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 mum-2. The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots. Acknowledgements A.M.M. and D.V.L. acknowledges support of the Ministry of Education and Science of the Russian Federation (contract 14.Z50.31.0021,7th April 2014) K.G.B., M.V.R. and A.A.T. gratefully acknowledge the financial support of the Russian Science Foundation (project 14-22-00107).

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