"Физика и техника полупроводников"
Вышедшие номера
Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential
Переводная версия: 10.1134/S1063782618040231
Russian Foundation for Basic Research, mol_a, 16-32-00560
Council for grants of the Russian Federation President, MK-3632.2017.2
Council for grants of the Russian Federation President, МК-6492.2018.2
Ministry of Education and Science of the Russian Federation, Leading universities of the Russian Federation, 074- U01
Ministry of Education and Science of the Russian Federation, 16.2593.2017/4.6
Ministry of Education and Science of the Russian Federation, 16.2593.2017/8.9
Mozharov A.M. 1, Vasiliev A.A.1, Bolshakov A.D. 1, Sapunov G.A.1, Fedorov V.V.1, Cirlin G.E.1,2,3, Mukhin I.S.1,2
1St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, Russia
2ITMO University, Saint-Petersburg, Russia
3Institute for Analytical Instrumentation RAS, St. Petersburg, Russia
Email: mozharov@spbau.ru, ftf.vasiliev@yandex.ru, acr1235@mail.ru, sapunovgeorgiy@gmail.com, imukhin@spbau.ru
Выставление онлайн: 20 марта 2018 г.

In this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied heterostructure. On the base of numerical calculation results the model describing negative differential resistance phenomenon was proposed. We assume this effect to be related with strong localization of current flow inside the nanowire and emergence of Gunn effect in this area.

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Дата начала обработки статистических данных - 27 января 2016 г.