"Физика и техника полупроводников"
Вышедшие номера
Hybrid GaAs/AlGaAs nanowire --- quantum dot system for single photon sources
Переводная версия: 10.1134/S1063782618040103
Cirlin G.E.1,2,3,4, Reznik R.R.1,2,3,4, Shtrom I.V.1,3, Khrebtov A.I.1,2, Samsonenko Yu.B.1,2,3, Kukushkin S.A.5, Kasama T.6, Akopian N.6
1St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, Russia
2ITMO University, Saint-Petersburg, Russia
3Institute for Analytical Instrumentation RAS, St. Petersburg, Russia
4Peter the Great St. Petersburg Polytechnic University (SPbPU), St. Petersburg, Russia
5Institute of Problems of Mechanical Engineering Russian Academy of Science, St. Petersburg, Russia
6DTU Photonics,Technical University of Denmark, Kgs. Lyngby, Denmark
Email: cirlin@beam.ioffe.ru
Выставление онлайн: 20 марта 2018 г.

III-V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology. Acknowledgements We are grateful for the support of the Ministry of education and science of Russian Federation (state task, project No 16.2483.2017/4.6). The nanowire samples were grown under the support of Russian Science Foundation (Project No 14-12-00393).

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Дата начала обработки статистических данных - 27 января 2016 г.