Gubaydullin A.R.1,2, Symonds C.2, Bellessa J.2, Ivanov K.A.1,3, Kolykhalova E.D.1,4,5, Sasin M.E.4, Pozina G.6, Kaliteevski M.A.1,3,4
1St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, Russia
2Univ Lyon, Universite Claude Bernard Lyon 1, CNRS, Institut Lumi`ere Mati`ere,, LYON, France
3ITMO University, Saint-Petersburg, Russia
4Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
5Saint Petersburg Scientific Center, St. Petersburg, Russia
6Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden
Email: m.kaliteevski@mail.ru
Выставление онлайн: 20 марта 2018 г.
We study Tamm plasmon structure based on GaAs/Al0.95GaAs distributed Bragg reflector covered by thin silver layer, with active area formed by InAs quantum dots. We have measured the spectral and angular characteristics of photoluminescence and performed theoretical calculation of the spontaneous emission rate (modal Purcell factor) in the structure by using S-quantization formalism. We show that for Tamm plasmon mode the spontaneous emission can be enhanced by more than an order of magnitude, despite absorption in metallic layer. Acknowledgements The authors would like to thank A. Lemaitre and P. Senellart for the growth of the epitaxial structures. The work was supported by Russian Science Foundation grant N 16-12-10503. CS and JB acknowledge financial support from Agence Nationale de la Recherche (ANR) on ANR project NEHMESIS and FP7 project HyMeCav. GP acknowledge the Swedish Research Council (VR). KI acknowledge support Presidium of RAS grant 1.1.4.6 "Optoelectronic devices based on Tamm plasmons".
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Дата начала обработки статистических данных - 27 января 2016 г.