"Физика и техника полупроводников"
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Radiation-produced defects in germanium: experimental data and models of defects
Emtsev V.V.1, Poloskin D.S.1, Oganesyan G.A.1, Kozlovski V.V.2
1Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Peter the Great St. Petersburg Polytechnic University (SPbPU), St. Petersburg, Russia
Email: emtsev@mail.ioffe.ru
Выставление онлайн: 19 ноября 2017 г.

The problem of radiation-produced defects in n-Ge before and after n-> p conversion is discussed in the light of electrical data obtained by means of Hall effect measurements as well as Deep Level Transient Spectroscopy. The picture of the dominant radiation defects in irradiated n-Ge before n-> p conversion appears to be complicated, since they turn out to be neutral in n-type material and unobserved in the electrical measurements. It is argued that radiation-produced acceptors at ~ EC-0.2 eV previously ascribed to vacancy-donor pairs (E-centers) play a minor role in the defect formation processes under irradiation. Acceptor defects at ~ EV+0.1 eV are absolutely dominating in irradiated n-Ge after n-> p conversion. All the radiation defects under consideration were found to be dependent on the chemical group-V impurities. Together with this, they are concluded to be vacancy-related, as evidenced positron annihilation experiments. A detailed consideration of experimental data on irradiated n-Ge shows that the present model of radiation-produced defects adopted in literature should be reconsidered. DOI: 10.21883/FTP.2017.12.45178.8599
  1. Gemanium-Based Technologies. From Materials to Devices, eds Cor Claeys and Eddy Simoen (Elsevier, Amsterdam-Boston--Heidelberg--London--New York--Oxford--Paris--San Diego-- San Francisco--Singapore--Sydney--Tokyo, 2007)
  2. G.D. Watkins. Mater. Sci. Semicond. Processing, 3, 227 (2000)
  3. V.V. Emtsev, T.V. Mashovets, S.M. Ryvkin. Radiat. Damage and Def. in Semiconductors. Inst. Phys. Conf. Ser. N 16 (The Institute of Physics, London and Bristol, 1972) p. 17
  4. T.V. Mashovets, V.V. Emtsev. Lattice Defects in Semiconductors, 1974. Inst. Phys. Conf. Ser. N 23 (The Institute of Physics, London and Bristol, 1975) p. 103
  5. V.V. Emtsev, T.V. Mashovets, E.A. Tropp. Fiz. Tekh. Poluprovodn., 12, 293 (1978) (in Russian) [Engl. Transl. AIP: Sov. Phys. Semicond., 12 (2), 169 (1977)]
  6. J.S. Blakemore. Semiconductor Statistics (Pergamon Press, 1962)
  7. A.G. Abdusattarov, V.V. Emtsev, T.V. Mashovets. Sov. Tech. Phys. Lett. [(Engl. Transl. AIP), 12 (12), 606 (1986)]
  8. G.D. Watkins, J.W. Corbett. Phys. Rev., 134, A1359 (1964)
  9. E.L. Elkin, G.D. Watkins. Phys. Rev., 174, 881 (1968).
  10. R. Krause-Rehberg, H.S. Leipner. Positron Annihilation in Semiconductors. Defect Studies. Springer Series Solid-State Sciences, vol. 127 (Springer Verlag, Berlin--Heidelberg, 1999)
  11. N.Yu. Arutyunov, V.V. Emtsev. Mater. Sci. Semicond. Processing, 9, 788 (2006)
  12. A. Nylandsted Larsen, A. Mesli. Physica B, 401--402, 85 (2007)
  13. N.S. Patel', C. Monmeyran, A. Agarwal, L.C. Kimerling. J. Appl. Phys., 118, 155702 (2015)
  14. J. Fage-Pedersen, A. Nylandsted Larsen, A. Mesli. Phys. Rev. B, 62, 10116 (2000)
  15. V.P. Markevich, A.R. Peaker, V.V. Litvinov, V.V. Emtsev, L.I. Murin. J. Appl. Phys., 95, 4078 (2004)
  16. V.P. Markevich, I.D. Hawkins, A.R. Peaker, K.V. Emtsev, V.V. Emtsev, V.V. Litvinov, L.I. Murin, L. Dobaczewski. Phys. Rev. B, 70, 235213 (2004)
  17. V.P. Markevich. Mater. Sci. Semicond. Processing, 9, 589 (2006)
  18. V.P. Markevich, A.R. Peaker, A.V. Markevich, V.V. Litvinov, L.I. Murin, V.V. Emtsev. Mater. Sci. Semicond. Processing, 9, 613 (2006)
  19. A.V. Markevich, V.V. Litvinov, V.V. Emtsev, V.P. Markevich, A.R. Peaker. Physica B, 376--377, 61 (2006)
  20. C. Nyamhere, F.D. Auret, A.G.M. Das, A. Chawanda. Physica B, 401--402, 499 (2007)
  21. C.E. Lindberg, J. Lundsgaard Hansen, P. Bornholt, A. Mesli, K. Bonde Nielsen, A. Nylandsted Larsen, L. Dobaczewski. Appl. Phys. Letts, 87, 172103 (2005)
  22. A. Nylandsted Larsen, A. Mesli, K.B. Nielsen, H. Kortegaard Nielsen, L. Dobaczewski, J. Adey, R. Jones, D.W. Palmer, P.R. Briddon, S. Oberg. Phys. Rev. Lett., 97, 106402 (2006)
  23. G.D. Watkins, J.W. Corbett. Phys. Rev., 121, 1001 (1961)
  24. P. Vanmeerbeek, P. Clauws. Phys. Rev. B, 64, 245201 (2001)
  25. P. Vanmeerbeek, P. Clauws, H. Vrielinck, B. Pajot, L. Van Hoorebeke, A. Nylandsted Larsen. Phys. Rev. B, 70, 035203 (2004)
  26. V.P. Markevich, I.D. Hawkins, A.R. Peaker, V.V. Litvinov, L.I. Murin, L. Dobaczewski, J.L. Lindstrom. Appl. Phys. Lett., 81, 1821 (2002)
  27. V.P. Markevich, A.R. Peaker, A.V. Markevich, V.V. Litvinov, L.I. Murin, V.V. Emtsev. Mater. Sci. Semicond. Processing, 9, 613 (2006)
  28. L.I. Khirunenko, Yu.V. Pomozov, M.G. Sosnin, N.V. Abrosimov, H. Riemann. AIP Conf. Proc., 1583, 100 (2014)
  29. J. Coutinho, S. Oberg, V.J.B. Torres, M. Barroso, R. Jones, P.R. Briddon. Phys. Rev. B, 73, 235213 (2006)
  30. J. Coutinho, V.J.B. Torres, A. Carvalho, R. Jones, S. Oberg, P.R. Briddon. Mater. Sci. Semicond. Processing, 9, 477 (2006)
  31. A. Carvalho, R. Jones, J. Coutinho, M. Shaw, V.J.B. Torres, S. Oberg, P.R. Briddon. Mater. Sci. Semicond. Processing, 9, 489 (2006)
  32. A. Carvalho, R. Jones, J. Coutinho, V.J.B. Torres, S. Oberg, J.M. Campanera Alsina, M. Shaw, P.R. Briddon. Phys. Rev. B, 75, 115206 (2007)
  33. H. Hohler, N. Atodiresei, K. Schroeder, R. Zeller, P.H. Dederichs. Phys. Rev. B, 71, 035212 (2005)
  34. A. Chroneos, R.W. Grimes, C. Tsamis. Mater. Sci. Semicond. Processing, 9, 536 (2006)
  35. V.V. Emtsev, N.V. Abrosimov, V.V. Kozlovski, G.A. Oganesyan. Semiconductors (Pleiades Publishing Ltd.), 48, 1438 (2014).

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