Вышедшие номера
Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors
Tsai Jung-Hui1, Wu You-Ren1, Chiang Chung-Cheng1, Wang Fu-Min1, Liu Wen-Chau2
1Department of Electronic Engineering, National Kaohsiung Normal University, 116, Kaohsiung, Taiwan
2Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Поступила в редакцию: 9 января 2014 г.
Выставление онлайн: 20 августа 2014 г.

In this article, the characteristics of the GaAs homojunction camel-like gate field-effect transistors with and without the gate-to-source and gate-to-drain recesses structures are first investigated and compared. As to the device without the recesses structure, a second channel within the n+-GaAs cap layer is formed at large gate bias, which could enhance the drain output current and transconductance. Furthermore, a two-stage relationship between drain current (and transconductance) versus gate voltage is observed in the recesses structure. The simulated results exhibit a maximum drain saturation current of 447 (351 mA/mm) and a maximum transconductance of 525 (148 mS/mm) in the studied device without (with) the recesses structure. Consequentially, the demonstration and comparison of the variable structures provide a promise for design in circuit applications.
  1. H. Kamitsuna, Y. Yamane, M. Tokumitsu, H. Sugahara, M. Muraguchi. IEEE J. Solid-State Circuits, 41, 452 (2006)
  2. Y.S. Lin, Y.C. Ma, Y.T. Lin. J. Electrochem. Soc., 158, H305 (2011)
  3. H.Y. Liu, B.Y. Chou, W. C. Hsu, C. S. Lee, C.S. Ho. IEEE Trans. Electron Dev., 58, 4430 (2011)
  4. A. Bensoussan, R. Marec, J.L. Muraro, L. Portal, P. Calvel, C. Barillot, M.G. Perichaud, L. Marchand, G. Vignon. Microelectron. Reliab., 53, 1466 (2013)
  5. K.H. Yu, K.W. Lin, C.C. Cheng, K.P. Lin, C.H. Yen, C.Z. Wu, W.C. Liu. Electron. Lett., 36, 1886 (2000)
  6. J.H. Tsai, K.P. Zhu, Y.C. Chu, S.Y. Chiu. Electron. Lett., 39, 1611 (2003)
  7. J.H. Tsai. IEEE Electron. Lett., 26, 429 (2005)
  8. SILVACO 2013 Atals User's Manual Editor I (SILVACO Int. Santa Clara, CA, USA)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.