"Физика и техника полупроводников"
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Laser-induced anisotropic absorbtion, reflection and scattering of ligth in chalcogenide glassy semiconductors
Lyubin V.M.1, Klebanov M.L.1
1Department of Physics, Ben--Gurion University of the Negev, Beer--Sheva, Israel
Поступила в редакцию: 2 февраля 1998 г.
Выставление онлайн: 20 июля 1998 г.

Anisotropy induced in thin--film and bulk samples of chalcogenide glassy semiconductors by the linearly polarized light of different spectral ranges is studied. Three different ranges of exciting photons energy can be distinguished. 1) Above-band-gap light excitation is studied in film samples, two distinct processes are identified in this range: creation of photoinduced defects and their photostimulated orientation and reorientation; a "defects based" model of photoinduced anisotropy is further developed. 2) Sub-band-gap light excitation is studied in bulk samples; creation of anisotropically scattering centers is assumed to be the basis of all photoinduced vectorial phenomena in that spectral range. 3) Super-band-gap light excitation is studied in both film and bulk samples due to application of differential reflectance spectroscopy; it was shown that not only defects but also main covalent bonds of the glass can be oriented and reoriented by the linearly polarized light generating the photoinduced dichroism in this spectral interval.
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