"Физика и техника полупроводников"
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Transport properties of two-dimensional hole gas in a Ge1-xSix/Ge/Ge1-xSix quantum well in a vicinity of metal--insulator transition
Arapov Yu.G.1, Neverov V.N.1, Harus G.I.1, Shelushinina N.G.1, Yakunin M.V.1, Gudina S.V.1, Karskanov I.V.1, Kuznetsov O.A.2, de Visser A.3, Ponomarenko L.3
1Institute of Metal Physics, Ural Branch of Russian Academy of Sciences, Ekaterinburg, Russia
2Physicotechnical Institute at Nizhnii Novgorod State University, Nizhnii Novgorod, Russia
3Van der Waals--Zeeman Institute, University of Amsterdam, 108XE Amsterdam, The Netherlands
Поступила в редакцию: 13 февраля 2007 г.
Выставление онлайн: 21 октября 2007 г.

Observation of a low-temperature transition from metallic (drho/d T>0) to insulator (drho/d T<0) behavior of resisitivity rho(T) induced by a perpendicular magnetic field B is reported for a two-dimensional (2D) hole system confined within Ge layers of a p-Ge1-xSix/Ge/Ge1-xSix heterostructure. Essential feature of this system is that it is described by the Luttinger Hamiltonial with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g normal >> g||). The positive magnetoresistance revealed scales as a function of B/T. We attribute this finding to suppression of the triplet channel of electron-electron (hole-hole) interaction due to Zeeman splitting in the hole spectrum. PACS: 72.20.My, 73.20.Fz, 73.40.Qv, 73.63.Hs
  • P.A. Lee, T.V. Ramakrishnan. Rev. Mod. Phys. 57, 287 (1985)
  • B.L. Altshuler, A.G. Aronov. In: Electron-electron interactions in disordered systems, ed. by A.L. Efros, M. Pollak (Elsevier, Amsterdam, 1985) p. 1
  • S.V. Kravchenko, G.V. Kravchenko, J.E. Furneaux, V.M. Pudalov, M. D'Iorio. Phys. Rev. B, 50, 8039 (1994)
  • B.L. Altshuler, D.L. Maslov, V.M. Pudalov. Physica E, 9, 209 (2001); V.M. Pudalov. E-print archives, cond-mat/0405315
  • E. Abrahams, S.V. Kravchenko, M.P. Sarachik. Rev. Mod. Phys., 73, 251 (2001); S.V. Kravchenko, M.P. Sarachik. Rep. Prog. Phys., 67, 1 (2004); A.A. Shashkin. E-print archives, cond-mat/0405556
  • G. Zala, B.N. Narozhny, I.L. Aleiner. Phys. Rev. B, 64, 214 204 (2001); G. Zala, B.N. Narozhny, I.L. Aleiner. Phys. Rev. B, 64, 201 201(R) (2001)
  • I.V. Gornyi, A.D. Mirlin. Phys. Rev. Lett., 90, 076 801 (2003); I.V. Gornyi, A.D. Mirlin. Phys. Rev. B, 69, 045 313 (2004)
  • V.M. Pudalov, M.E. Gershenson, H. Kojima, G. Brunthaler, A. Prinz, G. Bauer. Phys. Rev. Lett., 91. 126 403 (2003); E-print archives, cond-mat/0401031
  • A. Punnoose, A.M. Finkelstein. Phys. Rev. Lett., 88, 016 802 (2002)
  • S. Das Sarma, E.H. Hwang. Phys. Rev. B, 69, 195 305 (2004); Phys. Rev. B, 68, 195 315 (2003)
  • D. Simonian, S.V. Kravchenko, M.P. Sarachik, V.M. Pudalov. Phys. Rev. Lett., 79, 2304 (1997)
  • D. Simonian, S.V. Kravchenko, M.P. Sarachik, V.M. Pudalov. Phys. Rev. B, 57, R9420 (1998)
  • P.T. Coleridge, A.S. Sachrajda, P. Zawadzki. Phys. Rev. B, 65, 125 328 (2002)
  • Yu.G. Arapov, V.N. Neverov, G.I. Harus, N.G. Shelushinina, M.V. Yakunin, O.A. Kuznetsov. a) Fiz. Tekn. Poluprov., 27, 1165 (1993); b) Semiconductors, 32, 649 (1998); Nanostructures, 11, 351 (2000); E-print archives: cond-mat/0203435; cond-mat/0212612; c) Low Temperature Phys., 30, 867 (2004)
  • A.M. Finkelstein. Zh. Eksp. Teor. Fiz., 84, 168 (1983) [Sov. Phys. JETP, 57, 97 (1983)]; A.M. Finkelstein. Z. Phys. B, 56, 189 (1984)
  • N.S. Averkiev, L.E. Golub, G.E. Pikus. Zh. Exp. Teor. Fiz., 113, 1429 (1998) [JETP, 86, 780 (1998)]; Sol. St. Commun., 107, 757 (1998); Fiz. Tech. Poluprov., 32, 1219 (1998) [Semiconductors, 32, 1087 (1998)]
  • S. Pedersen, C.B. Sorensen, A. Kristensen, P.E. Lindelof, L.E. Golub, N.S. Averkiev. Phys. Rev. B, 60, 4880 (1999); L.E. Golub, S. Pedersen. Phys. Rev. B, 65, 245 311 (2002)
  • G.M. Minkov, A.V. Germanenko, I.V. Gornyi. Phys. Rev. B, 70, 245 423 (2004)
  • I.L. Aleiner, B.L. Altshuler, M.E. Gershenson. E-print archives, cond-mat/9808053; Waves Random Media, 9, 20 (1999); B.N. Narozhny, G. Zala, I.L. Aleiner. Phys. Rev. B, 65, 180 202(R) (2002)
  • S. Hikami, A.I. Larkin, I. Nagaoka. Progr. Theor. Phys., 63, 707 (1980)
  • P.A. Lee and T.V. Ramakrishnan. Phys. Rev. B, 26, 4009 (1982)
  • C. Castellani, C. Di Castro, P.A. Lee. Phys. Rev. B, 57, R9381 (1998)
  • G. Zala, B.N. Narozhny, I.L. Aleiner. Phys. Rev. B, 65, 020 201(R) (2001)
  • J.C. Hensel, K. Suzuki. Phys. Rev. Lett., 22, 838 (1969)
  • Yu.G. Arapov, O.A. Kuznetsov, V.N. Neverov, G.I. Harus, N.G. Shelushinina, M.V. Yakunin. Semiconductors, 36, 519 (2002)
  • A.V. Nenashev, A.V. Dvurechenskii, A.F. Zinov'eva. Zh. Eksp. Teor. Fiz., 123, 362 (2003) [JETP, 96, 321 (2003)]
  • V.M. Pudalov, G. Brunthaler, A. Prinz, G. Bauer. Pis'ma ZhETF, 65, 887 (1997) [JETP, Lett., 65, 932 (1997)]
  • S.A. Vitkalov, K. James, B.N. Narozhny, M.P. Sarachik, T.M. Klapwijk. Phys. Rev. B, 67, 113 310 (2003)
  • X.P.A. Gao, A.P. Mills, jr., A.P. Ramirez, L.N. Pfeifer, K.W. West. E-print archives, cond-mat/0308003
  • J. Yoon, C.C. Li, D. Shahar, D.C. Tsui, M. Shayegan. Phys. Rev. Lett., 84, 4421 (2000)
  • H. Noh, M.P. Lilly, D.C. Tsui, J.A. Simmons, E.H. Hwang, S. Das Sarma, L.N. Pfeiffer, K.W. West. Phys. Rev. B, 68, 165 308 (2003)
  • F. Stern. Phys. Rev. Lett., 44, 1469 (1980); F. Stern, S. Das Sarma. Sol. St. Electron., 28, 158 (1985); S. Das Sarma. Phys. Rev. B, 33, 5401 (1986)
  • A. Gold, V.T. Dolgopolov. Phys. Rev. B, 33, 1076 (1986)
  • L. Li, Y.Y. Proshuryakov, A.K. Savchenko, E.H. Linfield, D.A. Ritchie. Phys. Rev. Lett., 90, 076 802 (2003)
  • Yu.G. Arapov, G.A. Alshanskii, G.I. Harus, V.N. Neverov, N.G. Shelushinina, M.V. Yakunin, O.A. Kuznetsov. Nanotechnology, 13, 86 (2002)
  • M.S. Burdis, C.C. Dean. Phys. Rev. B, 38, 3269 (1988)
  • D.J. Bishop, R.C. Dynes, D.C. Tsui. Phys. Rev. B, 26, 773 (1982)
  • E.A. Galaktionov, A.K. Savchenko, S.S. Safonov, Y.Y. Proskuryakov, L. Li, M. Pepper, M.Y. Simmons, D.A. Ritchie, E.H. Linfield, Z.D. Kvon. E-print archives, cond-mat/0402139
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