"Физика и техника полупроводников"
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Вышедшие номера
Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors
Tsai Jung-Hui1, Wu You-Ren1, Chiang Chung-Cheng1, Wang Fu-Min1, Liu Wen-Chau2
1Department of Electronic Engineering, National Kaohsiung Normal University, 116, Kaohsiung, Taiwan
2Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Поступила в редакцию: 9 января 2014 г.
Выставление онлайн: 20 августа 2014 г.

In this article, the characteristics of the GaAs homojunction camel-like gate field-effect transistors with and without the gate-to-source and gate-to-drain recesses structures are first investigated and compared. As to the device without the recesses structure, a second channel within the n+-GaAs cap layer is formed at large gate bias, which could enhance the drain output current and transconductance. Furthermore, a two-stage relationship between drain current (and transconductance) versus gate voltage is observed in the recesses structure. The simulated results exhibit a maximum drain saturation current of 447 (351 mA/mm) and a maximum transconductance of 525 (148 mS/mm) in the studied device without (with) the recesses structure. Consequentially, the demonstration and comparison of the variable structures provide a promise for design in circuit applications.
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