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Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors

Tsai Jung-Hui¹, Wu You-Ren¹, Chiang Chung-Cheng¹, Wang Fu-Min¹, Liu Wen-Chau²

¹Department of Electronic Engineering, National Kaohsiung Normal University, 116, Kaohsiung, Taiwan
²Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan

Поступила в редакцию: 9 января 2014 г.

Выставление онлайн: 20 августа 2014 г.

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In this article, the characteristics of the GaAs homojunction camel-like gate field-effect transistors with and without the gate-to-source and gate-to-drain recesses structures are first investigated and compared. As to the device without the recesses structure, a second channel within the n⁺-GaAs cap layer is formed at large gate bias, which could enhance the drain output current and transconductance. Furthermore, a two-stage relationship between drain current (and transconductance) versus gate voltage is observed in the recesses structure. The simulated results exhibit a maximum drain saturation current of 447 (351 mA/mm) and a maximum transconductance of 525 (148 mS/mm) in the studied device without (with) the recesses structure. Consequentially, the demonstration and comparison of the variable structures provide a promise for design in circuit applications.

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