"Физика и техника полупроводников"
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Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
Mahajan A.M.1, Khairnar A.G.1, Thibeault B.J.2
1Department of Electronics, North Maharashtra University, Maharashtra, India
2ECE Department, University of California Santa Barbara, CA, USA
Поступила в редакцию: 23 мая 2013 г.
Выставление онлайн: 20 марта 2014 г.

In the present work, we have grown 2.83 nm thin Al2O3 films directly on pre-cleaned p-Si(100) substrate using precursor Trimethyl Aluminium (TMA) with substrate temperature of 300oC in a Plasma Enhanced Atomic Layer Deposition (PEALD) chamber. The MOS capacitors were fabricated by depositing Pt/Ti metal bilayer through shadow mask on Al2O3 high-k by electron beam evaporation system. The MOS devices were characterized to evaluate the electrical properties using a capacitance voltage (CV) set-up. The dielectric constant calculated through the CV analysis is 8.32 for Al2O3 resulting in the equivalent oxide thickness (EOT) of 1.33 nm. The flat-band shift of 0.3 V is observed in the CV curve. This slight positive shift in flat-band voltage is due to the presence of some negative trap charges in Pt/Ti/ALD-Al2O3/p-Si MOS capacitor. The low leakage current density of 3.08·10-10 A/cm2 is observed in the JV curve at 1 V. The Si/Al2O3 barrier height PhiB and the value of JFN are calculated to be 2.78 eV and 3.4· 10-5 A/cm2 respectively.
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