"Физика и техника полупроводников"
Вышедшие номера
Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors
Tsai Jung-Hui1, Huang Chia-Hong1, Ma Yung-Chun1, Wu You-Ren1
1Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung, Taiwan
Поступила в редакцию: 22 февраля 2012 г.
Выставление онлайн: 19 ноября 2012 г.

In this paper, the characteristics of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors (HBTs) are comparatively investigated by twodimensional simulation analysis. In the setback (heterostructure-emitter) HBT, a thin 50 Angstrem undoped In0.53Ga0.47As (n-In0.53Ga0.47As) layer is inserted between n-InP emitter and p+-InGaAs base layers to lower the energy band at emitter side for decreasing the collector-emitter offset voltage. The simulated results exhibits that the abrupt HBT has the largest current gain, the largest collector-emitter offset voltage, and the smallest unity gain cutoff frequency. While, the setback and heterostructure-emitter HBTs exhibit the smallest current gain and offcet voltage, respectively. Consequentially, the demonstration and comparison of the three-type HBTs provide a promise for design in circuit applications.
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