Thermally deposited Ag-doped CdS transistors with rare-earth oxide Nd2O3 as gate dielectric
Gogoi P.1
1Material Science Laboratory, Department of Physics, Sibsagar College, Joysagar-785 665, Assam, India
Поступила в редакцию: 21 февраля 2012 г.
Выставление онлайн: 17 февраля 2013 г.
The performance of thermally deposited CdS thin film transistors doped with Ag has been reported. Ag-doped CdS thin films have been prepared using chemical method. High dielectric constant rare earth oxide Nd2O3 has been used as gate insulator. The thin film trasistors are fabricated in coplanar electrode structure on ultrasonically cleaned glass substrates with a channel length of 50 mum. The thin film transistors exhibit a high mobility of 4.3 cm2V-1s-1 and low threshold voltage of 1 V. The ON-OFF ratio of the thin film transistors is found as 105. The transistors also exhibit good transconductance and gain band-width product of 1.15· 10-3 mho and 71 kHz respectively.
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