"Физика и техника полупроводников"
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Вышедшие номера
MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates
Переводная версия: 10.1134/S1063782618050251
Reznik R.R.1,2,3,4,5, Kotlyar K.P.1, Soshnikov I.P.1,3, Kukushkin S.A.6, Osipov A.V.6, Cirlin G.E.1,2,3,4
1St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, Russia
2ITMO University, Saint Petersburg, Russia
3Institute for Analytical Instrumentation RAS, St. Petersburg, Russia
4Peter the Great St. Petersburg Polytechnic University (SPbPU), St. Petersburg, Russia
5Department of Engineering, Durham University, Durham DH1 3LE, United Kingdom
6Institute of Problems of Mechanical Engineering Russian Academy of Science, St. Petersburg, Russia
Email: moment92@mail.ru
Выставление онлайн: 19 апреля 2018 г.

The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate --- the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied. Acknowledgements We are grateful for the support of the Ministry of education and science of Russian Federation (state task, project No 16.2483.2017/4.6). The nanowire samples were grown under the support of Russian Science Foundation (Project No 14-12-00393). This work was partially supported by RFBR (grant 16-29-03113 ofi_m).

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