"Физика и техника полупроводников"
Вышедшие номера
Nanoparticle formation in Zn+ and O+ ion sequentially implanted SiO2 film
Переводная версия: 10.1134/S106378261805024X
Privezentsev V.V. 1, Makunin A.V.2, Batrakov A.A.3, Ksenich S.V.4, Goryachev A.V.5
1Institute of Physics & Technology, Russian Academy of Sciences, Moscow, Russia
2Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow, Russia
3National Research University "MPEI", Moscow, Russia
4National Research University "MISiS", Moscow, Russia
5National Research University "MIET", Zelenograd, Moscow, Russia
Email: privezentsev@ftian.ru
Выставление онлайн: 19 апреля 2018 г.

The 64Zn+ and 16O+ ions were implanted in SiO2 film on Si substrate with next parameters: the implant dose was 5.0·1016 cm-2, for Zn+ ions the energy was 50 keV and for O+ ions the energy was 16 keV. Than the samples were subjected to isochronally annealing during 1 h in N2 atmosphere (400-600oC) and in Ar atmosphere in temperature range from 700 up to 1000oC with a step of 100oC. After annealing the samples surface is structured and its roughness increases due to nanoparticle formation in subsurface layer. In as implanted and in annealed samples on its surface and in its body the Zn-contained nanoparticles with a size about 100 nm were formed. These nanoparticles consist presumably from Zn phase after implantation and from ZnO phase after annealing at 700oC.

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