"Физика и техника полупроводников"
Издателям
Вышедшие номера
Concentric GaAs nanorings growth modelling
Переводная версия: 10.1134/S1063782618050226
РФФИ, мол-а, 16-31-00120
Nastovjak A.G. 1, Neizvestny I.G.1,2, Vasilenko M.A.1, Shwartz N.L.1,2
1A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
Email: alla@isp.nsc.ru, nataly.shwartz@gmail.com
Выставление онлайн: 19 апреля 2018 г.

The nanostructures formation process using the droplet epitaxy technique was investigated by Monte Carlo simulation. The simulation was fulfilled for two-dimensional and three-dimensional geometry substrates. The nanostructures morphology dependence on the growth temperature was presented. Crystal cluster, single and double rings were observed. The nanostructures shape was shown to be determined by the gallium diffusion length. The conditions of double rings formation during the droplet epitaxy were considered using analytical and numerical approaches. The factors that determine the rings location and shape were analyzed. The growth morphology was demonstrated to be dependent on the initial distance L between the droplets. The double ring formation was possible at a low droplet density only, when the As-stabilized region could be created between the droplets. Acknowledgement This work was supported by the RFBR (project No 16-31-00120) and by the Russian Academy of Sciences Programs.

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