"Физика и техника полупроводников"
Издателям
Вышедшие номера
Alternative technology for creating nanostructures using Dip Pen Nanolithography
Переводная версия: 10.1134/S1063782618050202
Lukyanenko A.V.1,2, Smolyarova T.E.1,2
1Kirensky Institute of Physics, Russian Academy of Science, Krasnoyarsk, Russia
2Siberian federal university, Krasnoyarsk, Russia
Email: lav@iph.krasn.ru
Выставление онлайн: 19 апреля 2018 г.

For modern microelectronics, at the present time, the technologies of consciousness smart structures play an important role, which can provide accuracy, stability and high quality of the structures. Submicron lithography methods are quite expensive and have natural size limitations, not allowing the production of structures with an extremely small lateral limitation. Therefore, an intensive search was conducted for alternative methods for creating submicron resolution structures. Especially attractive one is the possibility of self-organization effects utilization, where the nanostructure of a certain size is formed under the influence of internal forces. The dip pen nanolithography method based on a scanning probe microscope uses a direct-write technology and allows one to carry out a playback of small size structures with high accuracy. In the experiment, a substrate coated with Au (15 nm) using a DPN technique is applied to the polymer to form a desired pattern nano-sized channel. The experiment was conducted using a pointed probe SiN, coated MHA-Acetonitrile, on the Si(111)/Fe3Si/Au structure. Acknowledgment The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects No 16-42-243046, 16-42-242036 and 16-42-243060.

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.