"Физика и техника полупроводников"
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Вышедшие номера
Silicon nanowire array architecture for heterojunction electronics
Solovan M.M.1, Brus V.V.2, Mostovyi A.I.1, Maryanchuk P.D.1, Orletskyi I.G.1, Kovaliuk T.T.1, Abashin S.L.3
1Department of Electronics and Energy Engeneering, Chernivtsi National University, Chernivtsi, Ukraine
2Institute for Silicon Photovoltaics, Helmholtz
3Department of physics, National Aerospace University "Kharkiv Aviation Institute", Kharkiv, Ukraine
Email: m.solovan@chnu.edu.ua
Поступила в редакцию: 20 сентября 2016 г.
Выставление онлайн: 20 марта 2017 г.

Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nanostructured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage Voc=0.8 V, short-circuit current Isc=3.72 mA/cm2 and fill factor FF=0.5 under illumination of 100 mW/сm2. DOI: 10.21883/FTP.2017.04.44354.8407
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