ФТП, 2007, том 41, выпуск 4

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Material-induced shunts in multicrystalline silicon solar cells

O.Breitenstein , J.Bauer, J.P.Rakotoniaina 1

Max Planck Institute of Microstructure Physics,
Weinberg 2, D-06120 Halle, Germany

(Получена 12 сентября 2006 г. Принята к печати 3 октября 2006 г.)

By applying lock-in thermography imaging, light-beam induced current imaging, electron-beam induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which are growing preferentially in grain boundaries and are crossing the whole cell. These filaments are highly n-type doped, like the emitter layer at the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

PACS: 84.60.Jt, 87.63.Hg, 87.64.Ee, 87.64.Rr

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