ФТП, 2007, том 41, выпуск 4

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IBIC characterization of charge transport in CdTe : Cl

P.J.Sellin\kern1pt, A.W.Davies, F.Boroumand, A.Lohstroh, M.E.Ozsan, J.Parkin, M.Veale

Department of Physics, University of Surrey,
Guildford GU2 7XH, UK

(Получена 12 сентября 2006 г. Принята к печати 3 октября 2006 г.)

Studies of charge transport uniformity in bulk CdTe : Cl have been carried out using ion beam induced charge (IBIC) imaging. High resolution maps of charge collection efficiency, mobility-lifetime product (mutau) and drift mobility (mu) were measured using a scanning microbeam of 2 MeV protons focused to a beam diameter of ~3 mum. Excellent charge transport uniformity was observed in single crystal CdTe : Cl, with electron mutau values of up to 5·10-3 cm2/Vs. The presence of extended defects such as tellurium inclusions was also studied using IBIC, and their influence on the charge transport performance of CdTe detector structures is discussed.

PACS: 72.80.Jc, 79.20.Rf, 61.80.Jh

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