ФТП, 2002, том 36, выпуск 1

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Spin relaxation in asymmetrical heterostructures

N.S.Averkiev, L.E.Golub*, M.Willander*

A.F. Ioffe Physicotechnical Institute, Russia Academy of Sciences,
194021 St. Petersburg, Russia
* Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Goteborg University,
S-412 96 Goteborg, Sweden

(Received on April 3, 2001 г. Accepted for publishing on April 5, 2001 г.)

Electron spin relaxation by the D'yakonov--Perel' mechanism is investigated theoretically in asymmetrical AIIIBV heterostructures. Spin relaxation anisotropy for all three dimensions is demonstrated for a wide range of structural parameters and temperatures. Dependences of spin relaxation rates are obtained both for a GaAs-based heterojunctions and a triangular quantum wells. The calculations show a several-orders-of-magnitude difference between spin relaxation times for heterostructure parameters realized in experiments.

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