"Физика и техника полупроводников"
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Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN
Chen Huanting1, Keppens Arno2, Hanselaer Peter2, Lu Yijun3, Gao Yulin3, Zhuang Rongrong1, Chen Zhong3
1Department of Physics & Electronic Information Engineering, Zhangzhou Normal University, Zhangzhou, Fujian, P. R. China
2Light & Lighting Laboratory, Catholic University College Gent, Gebroeders De Smetstraat 1, Gent, Belgium
3Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, Fujian, P. R. China
Поступила в редакцию: 20 марта 2012 г.
Выставление онлайн: 19 сентября 2012 г.

The electrical-thermal-optical characteristics of AlGaInP yellow and InGaN/GaN blue LEDs under electrical stresses were studied. Since the increase of effective acceptor concentration on p-type side, the forward voltages of AlGaInP decrease after 3155 h aging. And the operating voltage of high forward bias expansion for InGaN/GaN is due to the increase of the series resistance. Compared with InGaN/GaN, AlGaInP LEDs display different trend for the relationship between optical output and ideality factors. The relationship between ideality factor and radiative recombination is also studied and established. The characteristic of different intermediate adhesive is compared during aging period based on transient thermal test.
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