"Физика и техника полупроводников"
Вышедшие номера
Comparative assessment of III-V heterostructure and silicon underlap double gate MOSFETs
Pardeshi Hemant1, Raj Godwin1, Pati Sudhansu Kumar1, Mohankumar N.2, Sarkar Chandan Kumar1
1Electronics and Telecommunication Engineering Department, Jadavpur University, Kolkata-700 032, West Bengal, India
2SKP Engineering College, Tiruvannamalai, Tamilnadu-606 611, India
Поступила в редакцию: 11 марта 2012 г.
Выставление онлайн: 19 сентября 2012 г.

Comparative assessment of III-V heterostructure and silicon underlap DG-MOSFETs, is done using 2D Sentaurus TCAD simulation. III-V heterostructure device has narrow-band In0.53Ga0.47As and wide-band InP layers for body, and high-K gate dielectric. Density gradient model is used for simulation and interface traps are considered. Benchmarking of simulation results show that III-V device provides higher on current, lesser delay, lower energy-delay product and lower DIBL than silicon device. However III-V device has higher SS and lower Ion/Ioff than silicon device. The results indicate that there is a need to optimize the Ion/Ioff, SS and DIBL values for specific circuits.
  1. S. Oktyabrsky, D.Ye. Peide. Fundamentals of III-V Semiconductor MOSFETs. 1st edn / (Springer Heidelberg, 2010)
  2. R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A. Majumdar, M. Metz, M. Radosavljevic. IEEE Trans. on Nanotechnol., 4, 153 (2005)
  3. S. Datta, G. Dewey, M. Doczy et al. IEEE Int. Electron. Dev. Meeting, 1, 653 (2003)
  4. T. Tezuka, N. Sugiyama, T. Mizuno, S. Takagi. IEEE Trans. Electron. Dev., 50, 1328 (2003)
  5. H. Shang, K.L. Lee, P. Kozlowski et al. Appl. Phys. Lett., 83, 5443 (2003)
  6. A. Bansal, B.C. Paul, K. Roy. IEEE Trans. Electron. Dev., 52, 256 (2005)
  7. K. Majumdar, P. Majhi, N. Bhat, R. Jammy. IEEE Trans. Nanotechnol., 9, 342 (2010)
  8. K. Majumdar, R.S. Konjady, R.T. Suryaprakash, N. Bhat. IEEE Trans. Nanotechnol., 10, 1249 (2011)
  9. R. Chau, S. Datta, A. Majumdar, CSIC 2005, Digest IEEE, 1, 17 (2005)
  10. A. Bansal, K. Roy. IEEE Trans. Electron. Dev., 54, 1793 (2007)
  11. V. Trivedi, J.G. Fossum, M.M. Chowdhury. IEEE Trans. Electron. Dev., 52, 56 (2005)
  12. Synopsys. TCAD Sentaurus device user's manual. Mountain View, CA (2009)
  13. R. Chau et. al. IEEE Trans. Nanotechnol., 4, 153 (2005)
  14. A. Nainani, Z. Yuan, T. Krishnamohan, K. Saraswat. Proc. Int. Conf. on Simulation of Semiconductor Processes and Devices, 103 (2010)

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