Modelling and simulation of saturation region in double gate Graphene nanoribbon transistors
Ghadiry Mahdiar1, Nadi Mahdieh2, Rahmani Meysan3, Ahmadi Mohamad3, Abd Mahaf Asrulnizam1
1School of Electrical and Electronic Engineering, Engineering Campus, University Sains Malaysia, Penang, Malaysia
2Department of Computer Engineering, Ashtian Branch, Islamic Azad University, Ashtian, Iran
3Faculty of Electrical and Electronics, University Technologi Malaysia, Skudai, Malaysia
Выставление онлайн: 20 декабря 2011 г.
A novel analytical model for surface field distribution and saturation region length for double gate graphene nanoribbon transistors has been proposed. The solution for surface potential and electric field has been derived based on Poisson equation. Using the proposed models, the effects of several parameters such as drain-source voltage, oxide thickness and channel length on the length of saturation region and electric field near the drain have been studied.
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