"Физика и техника полупроводников"
Вышедшие номера
Physics with isotopically controlled semiconductors
Haller E.E.1
1Department of Materials Science and Engineering, University of California at Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA USA
Поступила в редакцию: 26 ноября 2009 г.
Выставление онлайн: 19 июня 2010 г.

This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.
  1. F. Soddy. Ann. Rep. Prog. Chem., VII, 256 (1910); Nature, 91, 57 (1913)
  2. J.J. Thomson. Proc. Royal Soc. A, 89, 1 (1913)
  3. F.W. Aston. Mass Spectra and Isotopes (Edward Arnold, London, 1942) p. 4
  4. T.H. Geballe, G. Hull. Science, 250, 1194 (1958)
  5. M. Cardona, private communication
  6. J.M. Ziman. Electrons and Phonons (Oxford University Press, London, 1963) p. 288
  7. D.T. Morelli et al. In: Proc. 2nd Int. Conf. on New Diamond Science and Technology (MRS, Pittsburgh, 1991) p. 869
  8. I. Pomeranchuk. J. Phys. (Moscow), 6, 237 (1942)
  9. L. Wei et al. Phys. Rev. Lett., 70, 3764 (1993)
  10. J. Callaway. Phys. Rev., 113, 1046 (1959)
  11. T.H. Geballe. Science, 250, 1194 (1990)
  12. J.R. Olson et al. Phys. Rev. B, 47, 14 850 (1993)
  13. V.I. Ozhogin et al. JETP Lett., 63, 490 (1996)
  14. V. Asen-Palmer et al. Phys. Rev. B, 56, 9431 (1997)
  15. T. Ruf et al. Sol. St. Commun., 115, 243 (2000); Erratum, Sol. St. Commun., 127, 257 (2003)
  16. A.V. Inyushkin. Inorg. Mater., 38, 427 (2002)
  17. L. Vegard. Z. Phys., 5, 17 (1921)
  18. L. Nordheim. Ann. Phys., 9, 607 (1931)
  19. H.D. Fuchs et al. Sol. St. Commun., 82, 225 (1992)
  20. H.D. Fuchs et al. Phys. Rev. B, 44, 8633 (1991)
  21. H.D. Fuchs et al. Phys. Rev. B, 43, 4835 (1991)
  22. P. Etchegoin et al. Sol. St. Commun., 83, 843 (1992)
  23. M. Cardona et al. J. Non-Cryst. Sol., 141, 257 (1992)
  24. M. Cardona et al. J. Phys. Condens. Matter, 5, A61 (1993)
  25. P.W. Anderson. Phys. Rev., 109, 1492 (1955)
  26. G. Davies et al. Semicond. Sci. Technol., 7, 1271 (1992)
  27. G. Davies et al. Semicond. Sci. Technol., 8, 127 (1993)
  28. K.C. Hass et al. Phys. Rev. B, 44, 12 046 (1991)
  29. K.C. Hass et al. Phys. Rev. B, 45, 7171 (1992)
  30. R.M. Chrenko et al. J. Appl. Phys., 63, 5873 (1988)
  31. H.D. Fuchs et al. Superlatt. Microstruct., 13, 447 (1993)
  32. J. Spitzer et al. Phys. Rev. Lett., 72, 1565 (1994)
  33. M. Nakajima et al. Phys. Rev. B, 63, 161 304 (R) (2001)
  34. B. Jusserand, M. Cardona. In: Light Scattering in Solids V, eds M. Cardona and G. Guntherodt (Springer-Verlag, Berlin, 1989) p. 49
  35. P. Molin\`as-Mata, M. Cardona. Phys. Rev. B, 43, 9799 (1991)
  36. T. Kojima et al. Appl. Phys. Lett., 83, 2318 (2003)
  37. K.M. Itoh et al. Phys. Rev. Lett., 77, 4058 (1996)
  38. B.I. Shklovskii, A.L. Efros. Electronic Properties of Doped Semiconductors, Solid State Series, Vol. 45 (Springer-Verlag, Berlin, 1984)
  39. K.M. Itoh et al. J. Phys. Soc. Jpn., 73, 173 (2004)
  40. E.E. Haller. Semicond. Sci. Technol., 5, 319 (1990)
  41. H. Fuchs et al. Phys. Rev. B, 51, 16 817 (1995)
  42. H. Bracht et al. Phys. Rev. Lett., 81, 393 (1998)
  43. H.H. Silvestri, Ph.D. Thesis. UC Berkeley, 2004, unpublished
  44. H. Bracht et al. Nature, 408, 69 (2000)
  45. H.A. Bracht et al. Sol. St. Commun., 133, 727 (2005)
  46. A.S. Barker, A.J. Sievers. Rev. Mod. Phys., 47, Suppl. 2 (1975)
  47. E.E. Haller. Mater. Res. Soc. Symp. Proc., 378, 547 (1995)
  48. W. Kaiser et al. Phys. Rev., 101, 1264 (1956)
  49. B. Pajot, P. Clauws. In: Proc. 18th Int. Conf. on the Physics of Semiconductors, ed. O. Engstrom (Word Scientific, Singapore, 1987) p. 911
  50. A.J. Mayur et al. Phys. Rev. B, 49, 16 293 (1994)
  51. A.K. Ramdas, S. Rodriquez. Rep. Progr. Phys., 44, 1297 (1981)
  52. T.M. Lifshits, F.Y. Nad. Doklady Akademii Nauk SSSR, 162, 801 (1965)
  53. E.E. Haller et al. IEEE Trans. Nucl. Sci. NS-22, No 1, 127 (1975)
  54. A. Onton et al. Phys. Rev., 163, 686 (1967)
  55. M. Steger et al. Phys. Rev. B, 79, 2 052 190 (2009)
  56. M.L.W. Thewalt et al. J. Appl. Phys., 101, 081 724 (2007)
  57. A. Yang et al. Phys. Rev. Lett., 97, 227 401 (2006)
  58. M.Steger et al. Phys. Rev. Lett., 100, 177 402 (2008)
  59. B.E. Kane. Fortschritte der Physik-Progress of Physics, 48, 1023 (2000)
  60. K.M. Itoh, E.E. Haller. Physica E, 10, 463 (2001)
  61. T.D. Ladd et al. Phys. Rev. Lett., 89, 011 901 (2002)
  62. John J.L. Morton et al. Nature, 455, 1085 (2008)

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