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The analysis of leakage current in MIS Au/SiO₂/n-GaAs at room temperature

Altuntas H.¹, Ozcelik S.²

¹Department of Physics, Faculty of Science, Cankiri Karatekin University, Cankiri, Turkey
²Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

Поступила в редакцию: 14 мая 2012 г.

Выставление онлайн: 19 сентября 2013 г.

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The aim of this study is to determine the reverse-bias leakage current conduction mechanisms in Au/SiO₂/n-GaAs metal-insulator-semiconductor type Schottky contacts. Reverse-bias current-voltage measurements (I-V) were performed at room temperature. The using of leakage current values in SiO₂ at electric fields of 1.46-3.53 MV/cm, ln(J/E) vs. sqrt(E)sqrt graph showed good linearity. From this plot, dielectric constant of SiO₂ was calculated as 3.7 and this value is perfect agreement with 3.9 which is value of SiO₂ dielectric constant. This indicates, Poole-Frenkel type emission mechanism is dominant in this field region. On the other hand, electric fields between 0.06-0.73 and 0.79-1.45 MV/cm, dominant leakage current mechanisms were found as ohmic type conduction and space charge limited conduction, respectively.

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