A MoS₂ sheet in its 1T' phase is a two-dimensional topological insulator. It possesses highly conductive edge states which due to topological protection, are insensitive to back scattering and are suitable for device channels. A transition between the topological and conventional insulator phases in a wide 1T'-MoS₂ sheet is controlled by an electric field orthogonal to the sheet. In order to enhance the current through the channel several narrow nanoribbons are stacked. We evaluate the subbands in a narrow nanoribbon of 1T'-MoS₂ by using an effective k· p Hamiltonian. In contrast to a wide channel, a small gap in the spectrum of edge states in a nanoribbon increases with the electric field. It results in a rapid decrease in the nanoribbon conductance with the field, making it potentially suitable for switching. Keywords: topological insulators, topologically protected edge states, nanoribbons, subbands, k.p Hamiltonian, ballistic conductance.

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.