Physics-based two-dimensional numerical simulations are performed to analyze the device characteristics of tri-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistor (OTFT) fabricated using drop-casting technique. Further, using simulation technique enabling calibration this paper also presents the systematic study of the impact of active layer (TIPS-pentacene) thickness on device characteristics. The extracted parameters such as electric field intensity, current density, current On/Off ratio, and mobility exhibit variation with scaling down in active layer thickness from 500 to 100 nm. The study also revealed that Off current and On/Off current ratio (I_On/I_Off) is highly dependent on the thickness of the semiconductor layer. Furthermore, the highest value of I_On/I_Off is obtained at 100-nm thickness of TIPS-pentacene, which can be used for various fast-switching applications in digital circuits. Simulated results are not only reasonably matching with experimental results but also provide insight on charge transportation at the semiconductor-dielectric interface and in the bulk of TIPS-pentacene layer. Keywords: semiconductor thickness, mobility, organic thin-film transistor.

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Дата начала обработки статистических данных - 27 января 2016 г.