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Study and simulation of electron transport in Ga_0.5In_0.5Sb based on Monte Carlo method

DOI: 10.21883/FTP.2017.12.45179.8052

Bouazza B.¹, Belhadji Y.^1,2, Massoum N.¹, El Ouchdi A.A.^1,3

¹Research Unit of Materials and Renewable Energies, Abou Bakr Belkaid University, Tlemcen, Algeria
²Electrical and engineering department, Faculty of applied sciences, University of Tiaret, Tiaret, Algeria E-mail:
³Centre de Developpement des Technologies Avancees, Algiers, Algeria, Division of Microelectronics & Nanotechnologies

Выставление онлайн: 19 ноября 2017 г.

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This work addresses the issue related to the electronic transport in the III-V ternary material Ga_0.5In_0.5Sb using Monte Carlo method. We investigated the electronic motion in the three valleys Gamma,L, and X of the conduction band. These three valleys are isotropic, non-parabolic and centred on the first Brillouin zone. In our study, we included scatterings with ionised impurities, acoustic and polar optical phonons, as well as, intervalley and intravalley interactions. We discussed the electronic transport characteristics at the stationary and the transient regimes in function of temperature and electric field. DOI: 10.21883/FTP.2017.12.45179.8052

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