Физика и техника полупроводников

Авторам

Правила оформления публикаций

Вышедшие номера

2024
- 1
2023
- 1 2 3 4 5 6 7 8 9
2022
- 1 2 3 4 5 6 7 8 9 10 11 12
2021
- 1 2 3 4 5 6 7 8 9 10 11 12
2020
- 1 2 3 4 5 6 7 8 9 10 11 12
2019
- 1 2 3 4 5 6 7 8 9 10 11 12
2018
- 1 2 3 4 5 6 7 8 9 10 11 12 13
2017
- 1 2 3 4 5 6 7 8 9 10 11 12
2016
- 1 2 3 4 5 6 7 8 9 10 11 12
2015
- 1 2 3 4 5 6 7 8 9 10 11 12
2014
- 1 2 3 4 5 6 7 8 9 10 11 12
2013
- 1 2 3 4 5 6 7 8 9 10 11 12
2012
- 1 2 3 4 5 6 7 8 9 10 11 12
2011
- 1 2 3 4 5 6 7 8 9 10 11 12
2010
- 1 2 3 4 5 6 7 8 9 10 11 12
2009
- 1 2 3 4 5 6 7 8 9 10 11 12
2008
- 1 2 3 4 5 6 7 8 9 10 11 12
2007
- 1 2 3 4 5 6 7 8 9 10 11 12
2006
- 1 2 3 4 5 6 7 8 9 10 11 12
2005
- 1 2 3 4 5 6 7 8 9 10 11 12
2004
- 1 2 3 4 5 6 7 8 9 10 11 12
2003
- 1 2 3 4 5 6 7 8 9 10 11 12
2002
- 1 2 3 4 5 6 7 8 9 10 11 12
2001
- 1 2 3 4 5 6 7 8 9 10 11 12
2000
- 1 2 3 4 5 6 7 8 9 10 11 12
1999
- 1 2 3 4 5 6 7 8 9 10 11 12
1998
- 1 2 3 4 5 6 7 8 9 10 11 12
1997
- 1 2 3 4 5 6 7 8 9 10 11 12
1996
- 1 2 3 4 5 6 7 8 9 10 11 12
1995
- 1 2 3 4 5 6 7 8 9 10 11 12
1994
- 1 2 3 4 5 6 7 8 9 10 11 12
1993
- 1 2 3 4 5 6 7 8 9 10 11 12
1992
- 1 2 3 4 5 6 7 8 9 10 11 12
1991
- 1 2 3 4 5 6 7 8 9 10 11 12
1990
- 1 2 3 4 5 6 7 8 9 10 11 12
1989
- 1 2 3 4 5 6 7 8 9 10 11 12
1988
- 1 2 3 4 5 6 7 8 9 10 11 12

Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

Chatbouri S.¹, Troudi M.¹, Sghaier N.¹, Kalboussi A.¹, Aimez V.¹, Drouin D.¹, Souifi A.¹

¹Laboratoire de Micro electronique et Instrumentation (LR13ES12), Faculte des Sciences de Monastir, Avenue de l'environnement, Universite de Monastir, Monastir, Tunisia

Email: samir.chatbouri@yahoo.com, Samir.chatbouri@yahoo.com

Поступила в редакцию: 1 июня 2015 г.

Выставление онлайн: 20 августа 2016 г.

PDF версия

Абстракт
Литература
Статистика просмотров

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO_x=1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I-V curves confirms the creation of a pair electron/hole (e-h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photo-memory effect for 300 s for our nanopixel at room temperature.

L.T. Canham. Appl. Phys. Lett., 57, 1046 (1990)
A.G. Cullis, L.T. Canham. Nature, 353, 335 (1991)
D. Jurbergs, R. Rogojina, L. Mangolini, U. Kortshagen. Appl. Phys. Lett., 88, 233 116 (2006)
X.G. Li, Y.Q. He, M.T. Swihart. Langmuir, 20, 4720 (2004)
C.M. Hessel, E.I. Henderson, J.G.C. Veinot. Chem. Mater., 18, 6139 (2006)
C.M. Hessel, D. Reid, M.G. Panthani, M.R. Rasch, B.W. Goodfellow et al. Chem. Mater., 24, 393 (2012)
K.-Y. Cheng R. Anthony, U.R. Kortshagen, R.J. Holmes. Nano Lett., 11, 1952 (2011)
D.P. Puzzo, E.H. Henderson, M.G. Helander, Z. Wang, G.A. Ozin, Z. Lu. Nano Lett., 11, 1585 (2011)
L.G.E. Leonbandung, S.Y. Chou. Sci. Magazine, 275, 649 (1999)
http://pavel.physics.sunysb.edu/ likharev/personal/PIEE99.pdf
A. Fujiwara, Y. Takahashi, K. Murase. Phys. Rev. Lett., 78 (8), 1532 (1997)
R. Nuryadi, Y. Ishikawa, M. Tabe. Phys. Rev. B, 73 (4), 045 310 (2006)
H. Ikeda, R. Nuryadi, Y. Ishikawa, M. Tabe. Jpn. J. Appl. Phys., 43, 759 (2004)
G.N. Gol'tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski. Appl. Phys. Lett., 79 (6), 705 (2001)
A.J. Shields, M.P. O'Sullivan, I. Farrer, D.A. Ritchie, M.L. Leadbeater, N.K. Patel, R.A. Hogg, C.E. Norman, N.J. Curson, M. Pepper. Jpn. J. Appl. Phys., 40 (1, N 3B), 2058 (2001)
H. Kosaka, D.S. Rao, H.D. Robinson, P. Bandaru, E. Yablonovitch, K. Makita. Phys. Rev. B, 67 (4), 045 104 (2003)
A. Fujiwara, Y. Takahashi, K. Murase. Phys. Rev. Lett., 78 (8), 1532 (1997)
P.G. Collins, M.S. Fuhrer, A. Zettl. Appl. Phys. Lett., 76 (7), 894 (2000)
D. Kingrey, P.G. Collins. In: Third SPIE Conf. on Noise and Fluctuations (Austin, TX; SPIE, (2005)
K.S. Ralls, W.J. Skocpol, L.D. Jackel, R.E. Howard, L.A. Fetter, R.W. Epworth, D.M. Tennant. Phys. Rev. Lett., 52 (3), 228 (1984)
M.J. Kirton, M.J. Uren. Adv. Phys., 38, 367 (1989)
R. Nuryadi, H. Ikeda, Y. Ishikawa, M. Tabe. Appl. Phys. Lett., 86 (13), 133 106 (2005)
H.W. Ming et al. Proc. Eur. Conf. on Silicon Carbide and Related Materials (2010)
Yano Hiroshi et al. Appl. Phys. Lett., 81 (25), 4772 (2002)
D.M. Kim et al. Electron. Dev., IEEE Trans., 50 (4), 1131 (2003)
D.M. Kim, H.C. Kim, H.T. Kim. Electron. Dev., IEEE Trans., 49 (3), 526 (2002)
Jae Gwang Um, Mallory Mativenga, Piero Migliorato, Jin Jang. Appl. Phys. Lett., 101, 113 504 (2012)
Tzu-Yu Chen, Jenn-Gwo Hwu. ECS J. Sol. St. Sci. and Techn., 3 (4), Q37 (2014)
E.H. Nicollian, J.R. Brews. Metal Oxide Semiconductor Physics and Technology, ed. (J. Wiley \& Sons, N.Y. (1982)
M. Troudi, Na. Sghaier, A. Kalboussi, A. Souifi. Opt. Express, 18 (1), 1 (2010)
S. Chatbouri, M. Troudi, N. Sghaier, V. Aimez, D. Drouin, A. Souifi. Semicond. Sci. Technol., 29, 085 003 (2014)
L.P. Kouwenhoven, S. Jauhar, K. McCormick, D. Dixon, P.L. McEuen, Y.V. Nazarov, N.C. van der Vaart, C.T. Foxon. Phys. Rev. B, 50 (1994)
T.H. Ning, C.M. Osburn, H.N. Yu. Appl. Phys. Lett., 26, 248 (1975)
Himchan Oh, Sung-Min Yoon, Min Ki Ryu, Chi-Sun Hwang, Shinhyuk Yang, Sang-Hee Ko Park. Appl. Phys. Lett., 98, 033 504 (2011).

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Учредители

Издатель