"Физика и техника полупроводников"
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Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure
Bagraev N.T.1,2, Danilovskii E.Yu.1, Gets D.S.1, Kalabukhova E.N.3, Klyachkin L.E.1, Koudryavtsev A.A.1, Malyarenko A.M.1, Mashkov V.A.2, Savchenko D.V.3,4, Shanina B.D.3
1Ioffe Physicaltechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia
2State Polytechnical University, St. Petersburg, Russia
3Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
4Institute of Physics, Academy of Sciences of Czech Republic, Praha, Czech Republic
Поступила в редакцию: 29 октября 2014 г.
Выставление онлайн: 21 апреля 2015 г.

We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the delta-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The new EDESR technique by measuring the only magnetoresistance of the 6H-SiC nanostructure under the high frequency generation from the delta-barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the large value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (HF) lines in the ESR and EDESR spectra originating from the HF interaction with the 14N nucleus seem to attribute this triplet center to the N-VSi defect.
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