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Electrical properties of diluted n- and p-Si1-xGex at small x
Emtsev V.V.1, Abrosimov N.V.2, Kozlovskii V.V.3, Oganesyan G.A.1
1Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Leibniz Institute for Crystal Growth, Berlin, Germany
3St. Petersburg Polytechnical State University, St. Petersburg, Russia
2Leibniz Institute for Crystal Growth, Berlin, Germany
3St. Petersburg Polytechnical State University, St. Petersburg, Russia
Поступила в редакцию: 28 апреля 2014 г.
Выставление онлайн: 19 ноября 2014 г.
Hall effect and conductivity measurements are taken on Si1-xGex of n- and p-type at x≤0.05. Much attention is given to electrical measurements over a temperature interval of 25 to 40 K where the mobility of charged carriers is strongly affected by alloy scattering. The partial mobility of electrons and holes due to this scattering mechanism is estimated for n-Si1-xGex and p-Si1-xGex at small x. Together with this, an effect of the presence of Ge atoms upon the ionization energy of phosphorus and boron impurities is investigated. Some points related to an inhomogeneous distribution of Ge atoms in Si1-xGex are discussed.
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