Физика и техника полупроводников

Авторам

Правила оформления публикаций

Вышедшие номера

2024
- 1
2023
- 1 2 3 4 5 6 7 8 9
2022
- 1 2 3 4 5 6 7 8 9 10 11 12
2021
- 1 2 3 4 5 6 7 8 9 10 11 12
2020
- 1 2 3 4 5 6 7 8 9 10 11 12
2019
- 1 2 3 4 5 6 7 8 9 10 11 12
2018
- 1 2 3 4 5 6 7 8 9 10 11 12 13
2017
- 1 2 3 4 5 6 7 8 9 10 11 12
2016
- 1 2 3 4 5 6 7 8 9 10 11 12
2015
- 1 2 3 4 5 6 7 8 9 10 11 12
2014
- 1 2 3 4 5 6 7 8 9 10 11 12
2013
- 1 2 3 4 5 6 7 8 9 10 11 12
2012
- 1 2 3 4 5 6 7 8 9 10 11 12
2011
- 1 2 3 4 5 6 7 8 9 10 11 12
2010
- 1 2 3 4 5 6 7 8 9 10 11 12
2009
- 1 2 3 4 5 6 7 8 9 10 11 12
2008
- 1 2 3 4 5 6 7 8 9 10 11 12
2007
- 1 2 3 4 5 6 7 8 9 10 11 12
2006
- 1 2 3 4 5 6 7 8 9 10 11 12
2005
- 1 2 3 4 5 6 7 8 9 10 11 12
2004
- 1 2 3 4 5 6 7 8 9 10 11 12
2003
- 1 2 3 4 5 6 7 8 9 10 11 12
2002
- 1 2 3 4 5 6 7 8 9 10 11 12
2001
- 1 2 3 4 5 6 7 8 9 10 11 12
2000
- 1 2 3 4 5 6 7 8 9 10 11 12
1999
- 1 2 3 4 5 6 7 8 9 10 11 12
1998
- 1 2 3 4 5 6 7 8 9 10 11 12
1997
- 1 2 3 4 5 6 7 8 9 10 11 12
1996
- 1 2 3 4 5 6 7 8 9 10 11 12
1995
- 1 2 3 4 5 6 7 8 9 10 11 12
1994
- 1 2 3 4 5 6 7 8 9 10 11 12
1993
- 1 2 3 4 5 6 7 8 9 10 11 12
1992
- 1 2 3 4 5 6 7 8 9 10 11 12
1991
- 1 2 3 4 5 6 7 8 9 10 11 12
1990
- 1 2 3 4 5 6 7 8 9 10 11 12
1989
- 1 2 3 4 5 6 7 8 9 10 11 12
1988
- 1 2 3 4 5 6 7 8 9 10 11 12

Properties of nanostructured doped ZnO thin films grown by spray pyrolysis technique

Kumar N. Sadananda¹, Bangera Kasturi V.¹, Shivakumar G.K.¹

¹Thin Films Laboratory, Department of Physics, National Institute of Technology Karnataka, Surathkal, Mangalore, India

Поступила в редакцию: 18 сентября 2013 г.

Выставление онлайн: 20 июля 2014 г.

PDF версия

Абстракт
Литература
Статистика просмотров

Aluminium doped zinc oxide thin films are deposited on glass substrate by using spray pyrolysis technique. The X-ray diffraction study of the films revealed that the both the undoped and Al doped ZnO thin films exhibits hexagonal wurtzite structure. The preferred orientation is (002) for undoped and up to 3 at% Al doping, further increase in the doping concentration to 5 at% changes the preferred orientation to (101) direction. The surface morphology of the films studied by scanning electron microscope, reveal marked changes on doping. Optical study indicates that both undoped and Al doped films are transparent in the visible region. The band gap of the films increased from 3.24 to 3.36 eV with increasing Al dopant concentration from 0 to 5 at% respectively. The Al doped films showed an increase in the conductivity by three orders of magnitude with increase in doping concentration. The maximum value of conductivity 106.3 S/cm is achieved for 3 at% Al doped films.

D.C. Look. Mater. Sci. Eng. B, 80, 383-387 (2001)
N. Ohta, D. Ohba, S. Sato, Z. Tang, H. Shimizu 1, H. Shira. Thin Solid Films, 519, 6920-6927 (2011)
Hong Seong Kang, Jeong Seok Kang, Seong Sik Pang, Eun Sub Shim, Sang Yeol Lee. Mater. Sci. Eng. B, 102, 313-316 (2003)
Li Gong, Zhizhen Ye, Jianguo Lu, Liping Zhu, Jingyun Huang, Xiuquan Gu, Binghui Zhao. Vacuum, 84, 947-952 (2010)
Deuk-Hee Lee, Ki-Ho Park, Sangsig Kim, Sang Yeol Lee. Thin Solid Films, 520, 1160-1164 (2011)
D.C. Look, J.W. Hemsky, J.R. Sizelove. Phys. Lett., 82, 2552 (1999)
Jin-Hong Lee, Byung-Ok Park. Mater. Sci. Eng. B, 106, 242-245 (2004)
J.H. Lee, K.H. Ko, B.O. Park. J. Cryst. Growth, 247, 119 (2003)
P. Nunes, E. Fortunato, R. Martins. Inter. J. Inorg. Mater., 3, 1125 (2001)
F. Wu , L. Fang, Y.J. Pan, K. Zhou, H.B. Ruan, G.B. Liu, C.Y. Kong. Thin Solid Films, 520, 703-707 (2011)
P.K. Manoj, Benny Joseph, V.K. Vaidyan, D. Sumangala Devi Amma. Ceram. Intern., 33, 273-278 (2007)
Wei Gao, Zhengwei Li. Ceram. Intern., 30, 1155-1159 (2004)
G. Jimenez-Cadena, E. Comini, M. Ferroni, A. Vomiero, G. Sberveglieri. Mater. Chem. Phys., 124, 694-698 (2010)
K. Ramamoorthy, C. Sanjeeviraja, M. Jayachandran, K. Sankaranarayanan, Pijush Bhattacharya, L.M. Kukreja. J. Cryst. Growth, 226, 281-286 (2001)
A. Marzouki, A. Lusson, F. Jomard, A. Sayari, P. Galtier, M. Oueslati, V. Sallet. J. Cryst. Growth, 312, 3063-3068 (2010)
H. Benelmadjat, B. Boudine, O. Halimi, M. Sebais. Opt. Laser Technol., 41, 630-633 (2009)
A. Chakraborty, T. Mondal, S.K. Bera, S.K. Sen, R. Ghosh, G.K. Paul. Mater. Chem. Phys., 112, 162-166 (2008)
Chien-Yie Tsay, Hua-Chi Cheng, Yen-Ting Tung, Wei-Hsing Tuan, Chung-Kwei Lin. Thin Sol. Films, 517, 1032-1036 (2008)
Yasemin Caglar, Seval Aksoya, Saliha Ilican, Mujdat Caglar. Superlat. Microstr., 46, 469-475 (2009)
Hong-ming Zhou, Dan-qing Yi, Zhi-ming Yu, Lai-rong Xiao, Jian Li. Thin Sol. Films, 515, 6909-6914 (2007)
Maria Losurdo. Thin Sol. Films, 455- 456, 301-312 (2004)
E. Centinorgu, S. Goldsmith. J. Phys. D: Appl. Phys., 40, 5220-5236 (2007)
Chien-Yie Tsay, Kai-Shiung Fan, Sih-Han Chen, Chia-Hao Tsai. J. Alloys Comp., 495, 126-130 (2010)
B.E. Sernelius, K.F. Berggren, Z.C. Jin, I. Hamberg, C.G. Granqvist. Phys. Rev. B 37, 10 244 (1988)
J.I. Pankove. Optical Progress in Semiconductors (Dover, N.Y., 1975)
S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, T. Steiner. Prog. Mater. Sci., 50, 293-340 (2005)
M.V. Kurik. Phys. Status Solidi a, 8, 9 (1971)
F. Chouikh, Y. Beggah, M.S. Aida. J. Mater Sci: Mater Electron, 22, 499-505 (2011)
L. Schmidt-Mende, J.L. Mac Manus-Driscoll. Materialstoday 10, 40 (2007)
M. Caglar, S. Ilican, Y. Caglar, F. Yakuphanoglu. Appl. Surf. Sci., 255, 4491-4496 (2009)
Z.Q. Xu, H. Deng, Y. Li, Q.H. Guo, Y.R. Li. Mater. Res. Bull., 41, 354-358 (2006)
M. Mizuhashi. Thin Sol. Films, 76, 97 (1980)
Gil Mo Nam, Myoung Seok Kwon. J. Information Display, 10, 1 (2009)
A.E. Jimenez-Gonzalez, Jose A. Soto Urueta, R. Suarez-Parra, J. Cryst. Growth, 192, 430-438 (1998)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Учредители

Издатель