ФТП, 2009, том 43, выпуск 3: page 304...

ФТП, 2009, том 43, выпуск 3

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Electrical and optical properties of InN with periodic metallic In insertions

T.A.Komissarova^\kern1pt, T.V.Shubina, V.N.Jmerik, S.V.Ivanov, L.I.Ryabova^\kern1pt$,
D.R.Khokhlov^\kern1pt$, A.Vasson^\kern1pt*, J.Leymarie^\kern1pt*, T.Araki^\kern1pt, Y.Nanishi^\kern1pt

Ioffe Physicotechnical Institute, Russian Academy of Sciences,
194021 St. Petersburg, Russia
^$ Moscow State University,
119991 Moscow, Russia
^* LASMEA-UMR 6602 CNRS-UBP,
63177 AUBIERE Cedex, France
Ritsumeikan University,
1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan

(Получена 23 апреля 2008 г. Принята к печати 12 мая 2008 г.)

We report on a growth by molecular beam epitaxy of InN:In semiconductor/metal composite structures containing periodically inserted arrays of In clusters formed by intentional deposition of In metal films in a thickness range of

2-48

monolayers. It was found that indium insertions do not change markedly carrier mobility in the composites, that remains in the

1300-1600

²/(V

·s) range, while carrier concentration increases with rising In amount. Spectra of thermally detected optical absorption do not exhibit a noticeable Burstein

-

Moss shift of a principal absorption edge with increasing the carrier concentration, but rather complicated modification of their shapes.

PACS: 73.22.-f, 73.50.Dn, 81.05.Ea

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