ФТП, 2007, том 41, выпуск 4

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EBIC characterization of light emitting structures based on GaN

N.M.Shmidt \kern1pt, P.S.Vergeles\kern1pt*, E.B.Yakimov \kern1pt*

Ioffe Physicotechnical Institute, Russian Academy of Sciences,
194021 St. Petersburg, Russia
* Institute of Microelectronics Technology, Russian Academy of Sciences,
142432 Chernogolovka, Russia

(Получена 16 октября 2006 г. Принята к печати 30 октября 2006 г.)

The EBIC investigations of light emitting structures based on InGaN/GaN MQW with different number of wells have been carried out. The pronounced dependence of collection efficiency on quantum well number is observed. A comparison with apparent carrier profiles calculated from the C-V curves reveals the correlation between the collection efficiency and location of quantum well inside the depletion region. The defects producing bright EBIC contrast are revealed in the structure with 5 quantum wells. This contrast is associated with defects locally decreasing the excess carrier recombination inside quantum wells.

PACS: 63.37.HK, 72.80.Ey, 73.21.Fg

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